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  • 1
    Electronic Resource
    Electronic Resource
    Effect of hydrogenation and thermal annealing on the photoluminescence of p-InP (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5398-5405 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of hydrogenation and thermal annealing on the photoluminescence (PL) of InP:Mg and InP:Zn is presented. On hydrogenation, a rise in near-band-edge PL intensity by a factor of 16 for the InP:Mg sample and a factor of 50 for the InP:Zn sample is observed and this is attributed to the passivation of nonradiative centers. A donor–acceptor pair transition before hydrogenation in the InP:Mg sample and after hydrogenation in the InP:Zn sample was observed. In both cases, the magnitude of the shift in peak position with excitation intensity shows the involvement of a donor deeper than the normally present shallow donors. The ionization energy of the donor in InP:Mg is estimated to be 48 meV and that in InP:Zn is estimated to be 〈40 meV. No hydrogenation induced radiative transitions were observed. In the InP:Mg samples, the acceptor passivation effects are lost after annealing at a temperature of 350 °C for 2 min, whereas the nonradiative center passivation after hydrogenation is not completely lost. In InP:Zn, the acceptor passivation along with nonradiative and deep center passivation are lost after an annealing treatment of 300 °C for 2 min. A thermally induced D–A pair emission in InP:Zn which moves to lower energies with increasing annealing temperature is observed. Such a transition is not observed for InP:Mg. This can be either due to a preferential pairing of the donor and acceptor which becomes randomized after the heat treatment or due to the removal of hydrogenation effects by annealing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359230
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  • 2
    Electronic Resource
    Electronic Resource
    Resistance switching in indium phosphide using hydrogen passivation of acceptors (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2256-2257 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter demonstrates the use of dopant passivation by hydrogen in a highly doped semiconductor, for resistance switching applications. The acceptor passivation by hydrogen was utilized to form a rectifying contact on InP which otherwise showed nonrectifying behavior due to high dopant concentration. A reverse bias annealing of the diodes converted the rectifying contact into a nonrectifying one whereas an anneal without bias left it unchanged. The attainment of selective conversion is explained in terms of the reactivation processes involved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111636
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  • 3
    Electronic Resource
    Electronic Resource
    Reduced phosphorus loss from InP surface during hydrogen plasma treatment (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1696-1698 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method for plasma hydrogenation of InP with a reduced phosphorus loss is reported. The loss of P from InP surface is suppressed by the use of a sacrificial InP wafer kept directly in the plasma while the test sample is kept away from it in a downstream geometry. It is shown using photoluminescence that the P vacancy related transitions are considerably reduced for InP hydrogenated in the presence of a sacrificial wafer when compared to the one hydrogenated without it. The results suggest the utility of the sacrificial InP wafer in providing a P overpressure during H plasma exposure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111835
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  • 4
    Electronic Resource
    Electronic Resource
    Reverse-bias annealing kinetics of Mg-H complexes in InP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4521-4526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reactivation kinetics of hydrogen-passivated Mg acceptors in InP have been studied by annealing experiments carried out with different reverse biases. It is shown using a new analysis that the actual dissociation energy of the Mg-H complexes can be estimated even without applying a sufficient reverse bias to overcome retrapping of H at the dopant site. The dissociation process follows a first-order kinetics and the dissociation frequency and activation energy were estimated at various depths ranging from the surface up to 0.5 μm using an empirical analysis of the experimental data. A bias-independent dissociation energy of 1.40±0.08 eV was obtained when estimated at the surface. An apparently higher dissociation energy results when calculated in the bulk. This overestimation is pronounced for low-bias anneals and is explained as a result of retrapping. The concentration profile data is consistent with the positively charged state of the diffusing H in p-InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354369
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