Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 1884-1886
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Negative transconductance is reported in a resistive gate metal-semiconductor field-effect transistor (MESFET) for the first time. The negative transconductance arises as a result of the negative differential mobility of electrons in the GaAs channel, and is adequately described by a simple equivalent circuit model. The experimental device is fabricated with a planar ion-implanted MESFET process, and shows promise as a microwave signal source for use in monolithic microwave integrated circuits.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101230
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |