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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 548-550 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant tunneling by fast neutron irradiation with doses from 1×1012 to 1×1016 n/cm2 was studied. We observed that peak and valley positions shifted to higher voltages, and peak-to-valley ratios decreased with higher doses in static current-voltage characteristics. Several models which take into account ionized impurities were used to give consistent explanation to such phenomena.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 52 (1991), S. 302-306 
    ISSN: 1432-0630
    Keywords: 61.40.-a ; 61.16.FK ; 68.20.tt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The structural relaxation and crystallization processes of the Cu50Zr50 amorphous alloy have been studied by field ion microscopy (FIM) on an atomic scale. An interesting phenomenon which we call the clustering effect was observed for the first time as far as we know. In the temperature range 673–723 K, clusters consisting of 3, 4, or 5 atoms formed and migrated towards certain crystalline centers. They then combined with one another and rearranged to produce an ordered atomic array. This clustering process including the formation, migration, combination and rearrangement of clusters is considered as a structural relaxation process.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 63 (1996), S. 277-281 
    ISSN: 1432-0630
    Keywords: 68.35.-p ; 79.60.-i
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Interfacial reactions of evaporated chromium with $$Al_2 O_3 (1\bar 102)$$ surface has been studied using Auger electron spectroscopy (AES). The results reveal that the interfacial region consists of a mixture, which is a double oxide of Cr and Al or two separated oxides. After annealing, the chromium oxide and the metallic Al produced by reduction of the Al3+ ions were easily detected by AES at the interface. We suggest that the interfacial reaction occurs mainly by the charge transfer from the 3d electrons of Cr atoms to O 2p orbitals of the Al2O3 substrate. The annealing at higher temperature (≈973 K) is favourable to promote the interfacial reaction between the surface oxygen and the initial few atomic monolayers of the deposited chromium. The results also showed that the change of the relative Auger peak-to-peak height (APPH(%)) of the Cr LMM group peaks can be used as an index to identify the oxidation states of chromium at the Cr/Al2O3 interface.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 63 (1996), S. 277-281 
    ISSN: 1432-0630
    Keywords: PACS: 68.35.-p; 79.60.-i
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Interfacial reactions of evaporated chromium with Al2O3(1 &1macr; 0 2) surface has been studied using Auger electron spectroscopy (AES). The results reveal that the interfacial region consists of a mixture, which is a double oxide of Cr and Al or two separated oxides. After annealing, the chromium oxide and the metallic Al produced by reduction of the Al3+ ions were easily detected by AES at the interface. We suggest that the interfacial reaction occurs mainly by the charge transfer from the 3d electrons of Cr atoms to O 2p orbitals of the Al2O3 substrate. The annealing at higher temperature (∼973 K) is favourable to promote the interfacial reaction between the surface oxygen and the initial few atomic monolayers of the deposited chromium. The results also showed that the change of the relative Auger peak-to-peak height (APPH(%)) of the Cr LMM group peaks can be used as an index to identify the oxidation states of chromium at the Cr/Al2O3 interface.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 30 (1995), S. 339-346 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The Ti/Al2O3 (1 ¯1 0 2) interface formation has been investigated by X-ray photoelectron spectroscopy and Auger electron spectroscopy (AES). The results showed that when an active metal titanium was evaporated on to a room-temperature Al2O3 (1 ¯ 1 0 2) surface in ultrahigh vaccum, a Ti/Al2O3 interface region of about 200 nm was formed, and in the first several monolayers of titanium, the titanium was oxidized due to the active oxygen anions on the surface. Therefore, the pure Ti/Al2O3 interface was replaced gradually by a titanium oxides/Al2O3 interface, which has a stronger interaction than the former. The change of shape of the photoemission lines and the shift of binding energy of aluminium, oxygen and titanium with increasing coverage of titanium showed that the formation of the Ti-O bond at the interface is due to titanium transferring its electrons to Al3+ via O2− anions in the Al-O bond, whereby the Al3+ was reduced to metallic aluminium, Al0. The AES intensity profile also proved the existence of the reduced species Al0. This suggests that the reaction layer consists of a multiphasic mixture: the Ti-O type phase, the (Ti, Al)2O3 phase and metallic aluminium phase.
    Type of Medium: Electronic Resource
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