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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence of nanocrystallites embedded in hydrogenated amorphous silicon films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6193-6196 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated light-emitting nanocrystallites embedded in an a-Si:H matrix using a conventional plasma-enhanced chemical-vapor-deposition system. It was found that the photoluminescence properties are directly related to the deposition parameters. The quantum size effect model is proposed to explain the photoluminescence. Two structural prerequisites are proposed for this kind of films to exhibit effective light emission: One is an upper limit for mean crystallite size of about 3.4 nm, the other is an upper limit for crystallinity of about 30%. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360778
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of ion irradiation damage on properties of porous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1320-1323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of ion-irradiation on porous Si formation, microstructure, and optical properties. Porous Si was first self-implanted and then fabricated by anodization. With increasing implantation dose, the photoluminescence (PL) intensity decreased, and the PL spectra were also red shifted. Porous Si formed from crystal Si emitted light, while that from preamorphized Si did not. Porous Si luminescent patterns with a resolution of 2 μm features were formed by selective ion implantation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361028
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  • 3
    Electronic Resource
    Electronic Resource
    The role of point defects in anomalous diffusion of implanted boron in silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1475-1477 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of implantation damage on the anomalous diffusion has been observed by varying the relative positions of the boron profile and damage distribution produced by silicon preimplantation at different energies. It is shown that the anomalous diffusion of implanted boron is caused by the implantation damage rather than the fast diffusing interstitial boron. During annealing, the extended defects acting as sinks for point defects retard the anomalous diffusion in and near the defected band, however, for prolonged annealing they begin dissolving and emitting point defects which support the anomalous diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344401
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence spectra of C60 molecules embedded in porous Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3471-3473 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) spectra of C60 molecules embedded in porous Si through both physical deposition and chemical coupling were measured. In addition to the PL peak of porous Si, a peak at 730 nm caused by perfect C60 molecules and other peaks at 620 and 630 nm caused by imperfect C60 molecules were observed. The peak at 620 nm measured in the sample with physically deposited C60 is induced by C60 adsorbed on the Si atoms of the pore wall, while the peak at 630 nm measured in the sample with chemically coupled C60 molecules is caused by the coupled C60 molecules. At room temperature, the PL intensity of C60 embedded in the porous Si is obviously enhanced, and the transfer of carriers from porous Si grains into adjacent C60 is considered to be responsible for the PL enhancement. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115250
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence study of defects in Si+ ion implanted thermal SiO2 films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3609-3613 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Point defects and structure damages in Si-implanted thermal SiO2 films were examined by photoluminescence (PL) spectra, electron spin resonance spectra, and infrared absorption spectra. Under ∼5 eV excitation, the as-implanted film had two PL bands peaked at 4.3 and 2.4 eV, respectively. After thermal annealing, the peak energy of the low-energy band shifted from 2.4 to 2.7 eV with the increase of the annealing temperature to 1100 °C, and its intensity and width, and the relative ratio between the intensities of the two PL bands changed also. The change of the ratio, and the width and peak position of the low-energy band via annealing temperature was consistent with the recovery of the implantation-induced structure damage such as densification and distortion of silicon tetrahedra. We propose that the two PL bands are due to neutral oxygen vacancies (NOVs), and the PL characteristics of the NOV defects are related to the structure damage of the SiO2 network. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366578
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  • 6
    Electronic Resource
    Electronic Resource
    Relation between electroluminescence and photoluminescence of Si+-implanted SiO2 (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4028-4032 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroluminescence (EL) from Si+ implanted SiO2 thin film prepared by thermal oxidation was compared with photoluminescence (PL) properties. Both EL and PL spectra indicate that the luminescence originate from the same three luminescence bands around 470, 600, and 730 nm. Annealing at temperatures below and above 1000 °C makes the 470 and the 730 nm bands dominate in PL spectra, respectively. The 600 nm band, which is weaker in PL, is usually the strongest in EL. The relative contributions from different luminescence bands to EL depend on annealing, but are independent of current density. The different excitation mechanisms of the 470, 600, and 730 nm luminescence bands give rise to the discrepancy between EL and PL. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365712
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  • 7
    Electronic Resource
    Electronic Resource
    Raman scattering of porous structure formed on C+-implanted silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2091-2093 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of the porous structure with intense blue emission formed on C+-implanted silicon were examined using a 488 nm line of Ar+ laser. A Raman peak with full width at half-maximum of 37 cm−1 was obtained at about 492 cm−1. No Raman signals related to the β-SiC were detected. The experimental result indicates that the porous structure mainly consists of Si nanometer crystallites. The existence of β-SiC precipitates with nanometer sizes may be beneficial to the reduction of crystallite sizes and strengthen the Si skeleton, which will lead to an increase in the energy band gap of Si to the blue light emission. Using a model of phonon confinement, the obtained Raman spectra could be fitted on the basis of Si quantum crystallites and the average crystallite size was estimated to be 1.4 nm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115594
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of folded acoustic phonons in a porous silicon superlattice (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 611-612 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous silicon superlattice was fabricated and its Raman spectra were examined. The clear zone-folded doublets from longitudinal acoustic phonons were obtained up to fourth order. A similar phenomenon was not observed in ordinary porous silicon. Using the elastic continuum model, we calculated the frequencies of these folded doublets and the obtained results were in excellent agreement with the experimental ones. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116484
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  • 9
    Electronic Resource
    Electronic Resource
    Blue and red photoluminescence from Ge+ implanted SiO2 films and its multiple mechanism (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1790-1792 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Under violet excitation, a strong blue band and a broad red band are emitted simultaneously from the Ge nanocrystal embedded SiO2 films fabricated by Ge+ implantation and annealing. The blue band exhibits a complex annealing behavior, and the photoluminescence excitation spectral analysis indicates that it results from a combination of several implantation-induced deficient centers. The peak position of the red band shifts from 600 to 640 nm when the mean size of Ge nanocrystals increases from 4.3 to 6.7 nm, suggesting that the red band comes from the radiative recombination of excitons confined in Ge nanocrystals. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122283
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  • 10
    Electronic Resource
    Electronic Resource
    Intense violet-blue photoluminescence in as-deposited amorphous Si:H:O films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 698-700 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three photoluminescence (PL) bands at 340–370, 400–430, and 740 nm were observed at room temperature in a-Si:H:O films fabricated by plasma enhanced chemical vapor deposition without any postprocessing. The violet-blue emission is very strong and stable, and its intensity is closely related to the oxygen content in the films, which can be controlled by the applied dc biases on the sample substrates during deposition. The first two PL peaks are ascribed to Si–O related species, and the last one to the quantum size effect of the nanocrystallites embedded in the a-Si:H:O matrix. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119833
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