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  • 1
    Electronic Resource
    Electronic Resource
    Defect studies of electrothermal stress of InP metal-oxide-semiconductor structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 223-229 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out deep-level transient spectroscopy (DLTS) studies of traps that are generated in InP metal-oxide-semiconductor (MOS) structures by applying combinations of high reverse bias and high temperature (electrothermal stress). The MOS samples were prepared using different methods of oxidation. The defect levels in freshly made samples (before stress treatment) were found to be at 0.59, 0.54, and 0.45 eV below the conduction-band edge. After electrothermal stress treatment, traps at (Ec −0.35) and (Ec −0.22) eV were observed and these were found to be similar to the traps caused by electron injection and irradiation of InP. Both large- (filling pulse=1.2 V) and small-pulse (filling pulse=0.2 V) DLTS experiments were carried out to determine the variation of these traps with bias. We have proposed a simplified mechanism to account for the electrothermal stress-induced electron traps. This mechanism involves the concept of recombination-enhanced defect reaction and is general enough that it can be applied to all metal-insulator-semiconductor system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343910
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  • 2
    Electronic Resource
    Electronic Resource
    Capacitance-voltage studies of InP metal-oxide-semiconductor devices irradiated with 4He+ ions (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4201-4205 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance-voltage (C-V) measurements have been made on n-InP metal-oxide-semiconductor (MOS) devices damaged by 2-MeV 4 He+ ion bombardment. The C-V curves for samples with thin oxide layer (∼100 A(ring)) show the presence of a depletion layer during both forward and reverse bias. This behavior is significantly different from those of normal, undamaged MOS devices. Measurements made on n-InP MOS samples with different oxide thicknesses show that the C-V curves gradually approach that of a MOS device on a p-type substrate. The anomalous behavior of the C-V curves for the irradiated samples can be explained by the presence of an n-p-n structure under the oxide layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343984
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  • 3
    Electronic Resource
    Electronic Resource
    Near-surface defects associated with 2.0-MeV 16O+ ion implantation in n-GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 739-743 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the technique of deep-level transient spectroscopy (DLTS), we have studied the formation of the defects in the near-surface region of n-GaAs implanted with different doses of 2.0-MeV 16O+ ions. Our results show that EL6 and the U band are the principal defect centers in room-temperature-implanted samples. In the case of samples implanted at 200 °C, DLTS results also show the presence of hole levels in addition to the EL6 and the U band. When the samples were subjected to rapid thermal annealing after room-temperature ion implantation, hole traps were the major defect centers in the near-surface region. Just below the surface region, however, limited recovery has occurred as shown by the re-emergence of electron traps. However, the defect structure is still different from that of the unimplanted samples. These results can be used to show the extent of lattice recovery after rapid thermal annealing. A mechanism is proposed to explain the evolution of the defects in MeV ion implanted n-GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350360
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  • 4
    Electronic Resource
    Electronic Resource
    A comparison of one, two, and three band calculations of contact resistance for a GaAs ohmic contact using the Wentzel-Kramers-Brillouin approximation and a numerical solution to the Schrodinger equation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7660-7663 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explore the different contact resistances obtained by using a one, two, and three band Wentzel-Kramers-Brillouin (WKB) calculation of the tunneling probability for majority carriers in an ohmic contact to n-type GaAs. The depletion approximation is used resulting in a parabolic potential. Finally, the calculations are repeated using a numerical solution to the wave equation in the depletion region of the semiconductor instead of employing WKB. It will be seen that the WKB approximation leads to contact resistances that are approximately twice as large as those numerically calculated from the wave equation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347538
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  • 5
    Electronic Resource
    Electronic Resource
    Thermal and electric field induced defects in InP metal-insulator-semiconductor structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1940-1942 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The presence of deep levels in several samples of InP metal-insulator-semiconductor (MIS) structures was studied using the deep level transient spectroscopy technique. The InP MIS structures were fabricated using three different methods of oxide formation, two of which are chemical oxides and the third is plasma-grown oxide. Defect levels ranging from (Ec−0.22) to (Ec−0.6) eV were observed in the samples. However, the levels at about (Ec−0.22) and (Ec−0.35) eV were detected only after increasing the reverse-bias voltage to −2 V at a temperature of about 390 K. This phenomenon occurred in all the samples studied, irrespective of the method of oxidation. The appearance of the peaks corresponding to the shallower traps is irreversible and may explain the performance instability commonly encountered in InP MIS-based devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100329
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  • 6
    Electronic Resource
    Electronic Resource
    Current–voltage characteristics of a GaAs Schottky diode accounting for leakage paths (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 124-125 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Many fabricated Schottky diodes exhibit significant deviations from the theoretically calculated current–voltage (I–V) characteristics of ideal Schottky diodes. Attempts have been made to account for this deviation using interface states or surface state densities. Previous models have used the interfacial layer model to analyze the nonideal I–V characteristics of a GaAs Schottky barrier. We show here how nonideal behavior can be explained by considering surface leakage currents and material resistance. The standard figure of merit of Schottky diodes is the ideality factor, which can be obtained from measurements of δV/δ ln(I). By taking into account device resistance and shunt leakage paths with physically appropriate parameters, a relationship between δV/δ ln(I) and voltage can be established, which yields a better understanding of transport across the interface(s) of real Schottky diodes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125677
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  • 7
    Electronic Resource
    Electronic Resource
    Raman scattering of InGaAs/InP grown by uniform radial flow epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1848-1850 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uniform radial flow epitaxy, a novel growth technique, has been used to grow InGaAs films on InP. Epitaxial layers above and below the critical thickness for the onset of slip were grown. We used Raman spectroscopy to characterize the quality of epitaxial layers, determine alloy composition, and measure the strain. Raman spectra from both pseudomorphic (strained) and relaxed (unstrained) InGaAs films were obtained at 300 and 80 K. The difference in the frequencies of their GaAs-like longitudinal optical phonons was used to calculate stress for the strained InGaAs/InP, leading to a direct formula for the evaluation of the layer stress.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107187
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  • 8
    Electronic Resource
    Electronic Resource
    Contact resistance measurements on p-type 6H-SiC (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 384-386 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Specific contact resistance measurements are reported for Al-Ti ohmic contacts to epitaxial p-type 6H-SiC as a function of epitaxial doping. The circular transmission line method was used to measure the specific contact resistance including the sheet resistance of the epitaxial layer and the modified sheet resistance under the contact. Epitaxial layers with Al doping between 5.5×1015 and 2×1019 cm−3 yielded specific contact resistances between 2.9×10−2 and 1.5×10−5 Ω cm2. A good theoretical fit to the contact resistance data was obtained by assuming the metal-6H-SiC barrier height to equal 0.37 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108964
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  • 9
    Electronic Resource
    Electronic Resource
    High-Performance Evolved Gas Analysis System for Catalyst Characterization (1994)
    s.l. : American Chemical Society
    Analytical chemistry 66 (1994), S. 2226-2231 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00086a005
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  • 10
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    Caravan Sites (Book Review) (1950)
    Liverpool : Periodicals Archive Online (PAO)
    The Town planning review. 21:3 (1950:Oct.) 272 
    Details
    ISSN: 0041-0020
    Topics: Architecture, Civil Engineering, Surveying , Sociology
    Notes: REVIEWS
    URL: http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pao:&rft_dat=xri:pao:article:5341-1950-021-03-000013
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