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Tunnel switch diode based on AlSb/GaSb heterojunctions (2000)

Cheng, X.-C. ; Cartoixà, X. ; Barton, M. A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 6948-6950

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic "S" shaped current–voltage curve was found to occur for structures with AlSb barriers less than 300 Å thick. The switching voltage and current density exhibited less sensitivity to barrier and epilayer thickness than was predicted by the punch-through model. The results were correlated with drift diffusion simulations which have been modified to account for the presence of a tunneling contact. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1317236

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