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  • 1
    Electronic Resource
    Electronic Resource
    Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1513-1515 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carrier dynamics and absorption edges of InGaAsP samples grown by He-plasma-assisted molecular beam epitaxy and doped with various concentrations of beryllium are investigated via pump-probe experiments and Fourier transform infrared (FTIR) absorption spectroscopy. Carrier lifetimes from 10 to 〈1 ps are obtained for samples of increasing doping concentrations. The reduced in carrier lifetimes are attributed to Be compensation of the deep donor levels introduced by the He plasma. The carrier lifetime increases with photogenerated carrier density due to trap saturation. The FTIR results reveal sharp absorption edges in this material for doping concentrations up to 1×1018 cm−3. The fast carrier dynamics and the steep absorption edge make this material very attractive for ultrafast optical switching devices for use in high-speed time-division-multiplexing fiber communication systems. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119952
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  • 2
    Electronic Resource
    Electronic Resource
    Ultrafast dynamics of nonlinear absorption in low-temperature-grown GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2544-2546 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of a study of the subpicosecond dynamic behavior of optically induced absorption changes in low-temperature-grown GaAs. We show that the observed behavior is dominated by mid-gap trap states, and can be accurately modeled by the rate equations previously developed to describe quasi-cw results. Our data give the first approximate values for trap emptying times in this material. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116178
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  • 3
    Electronic Resource
    Electronic Resource
    Tailoring of trap-related carrier dynamics in low-temperature-grown GaAs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1156-1158 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we present the results of an experimental study of low-temperature-grown GaAs, which clearly resolves separately both carrier trapping and recombination processes. We extend our previous model to account for the observed carrier dynamics, and show how the material growth and annealing conditions can be adjusted to optimize the material properties for all-optical device applications. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119852
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  • 4
    Electronic Resource
    Electronic Resource
    He-plasma assisted epitaxy for highly resistive, optically fast InP-based materials (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 509-511 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP and related quaternaries (InGaAsP) have been grown by conventional gas source molecular beam epitaxy while simultaneously exposing the growth surface to a He plasma stream generated by electron cyclotron resonance. For growth temperatures from 400 to 450 °C, the InP produced by this process displays greatly increased resistivity, as high as 105 Ω cm, compared to growth without plasma where resistivities are typically less than 1 Ω cm. An InGaAsP quaternary, with band-gap wavelength of 1.55 μm, grown with the plasma displays a sharp band edge and fast photoresponse (15 ps). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117769
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  • 5
    Electronic Resource
    Electronic Resource
    Time-resolved phonon-assisted stimulated emission in AlGaAs-GaAs quantum wells (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 351-353 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence of phonon-assisted stimulated emission is reported for the first time. The temporal characteristics of the phonon-assisted stimulated emission are distinct from the stimulated emission from the quantum states. The phonon-assisted recombination is always delayed in time with respect to the confined particle transitions and has a larger full width at half maximum than the confined particle transitions. The dynamics of stimulated phonon emission along with the smaller transition probability for the phonon-assisted process may account for the distinct temporal characteristics. Data are presented on the emission intensity versus wavelength versus time from which the dependence of the delay on excitation intensity is extracted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105592
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  • 6
    Electronic Resource
    Electronic Resource
    Vertical cavity surface emitting laser with a submonolayer thick InAs active layer (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1800-1802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report photopumped operation of a vertical cavity surface emitting laser where the active region consists of a single pseudomorphic InAs-GaAs quantum well that is less than one monolayer thick. This represents the thinnest active layer to support stimulated emission when the optical feedback is perpendicular to the layer. Lasing action supported across a submonolayer thick quantum well can be understood by considering the effects on the carrier collection process and the gain across an ultrathin quantum well due to the spreading out of the electron and hole wavefunctions. Pulsed lasing due to gain across the InAs quantum well is confirmed for photoexcitation energies above and below the band edge of the GaAs confining layers at 17 and 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107169
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