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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7169-7175 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the development of high quality, broad-bandwidth, antireflection (AR) coatings using the low index provided by wet thermally oxidized Al0.98Ga0.02As. We address the design criteria, fabrication, and characterizations of AR coatings composed of surface and buried oxide layers on GaAs. We show, using native-oxide dispersion data, that surface oxide coatings can be designed to offer a nearly zero minimum of reflectance and a reflectance of 〈1% over bandwidths as large as 500 nm. Surface coatings having a reflectance minimum of 0.4% and a reflectance of 〈1% over 〉250 nm have been experimentally demonstrated at a design wavelength of 1 micrometer. Additionally, buried oxide coatings can be designed with an AlxGa1−xAs matching layer of any composition to exactly match the admittance of any substrate with effective index between 2.5 and 3.5. We have demonstrated buried oxide coatings, also designed for 1 micrometer, having a reflectance minimum of 0.4% and a reflectance of 〈1% over 21 nm. The calculated optical scattering loss from measured roughness data indicates that reflectance minima as low as 10−4 % are ultimately achievable with native-oxide antireflection coatings.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5110-5113 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band gap and microstructure of Ga0.5In0.5P have been shown to vary with deposition conditions. However, growth on (511)B GaAs substrates has been reported to give Ga0.5In0.5P with band gaps close to that of disordered material. It is shown here, that with appropriate selection of the growth parameters, Ga0.5In0.5P can be grown with low band gap and significant ordering on even the (511)B substrates, implying that surface steps play an important role in the ordering process. For the lattice-matched composition, a band gap of 1.83 eV was obtained using low growth temperature (575 °C), low growth rate (0.55 μm/h), and high phosphine pressure (5 Torr).
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical polarization in ordered GaInP2 alloys has been studied by low-temperature photoluminescence. A perturbative theory that includes the effects of lattice mismatch, substrate misorientation, and excitonic transitions has been developed for making quantitative comparisons between experimental results and theoretical predictions. We show that to obtain quantitative information about ordering from the polarization of near-band-gap transitions, all of the above-mentioned effects should be taken into account. This study demonstrates that the electronic and optical properties of a monolayer superlattice formed by partial ordering in the GaInP2 alloy can be well described by a simple perturbative Hamiltonian, i.e., a quasicubic model. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1833-1835 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the use of in situ, near-threshold photoemission to study the dynamics of GaAs surfaces during epitaxial crystal growth and, in particular, the observation of oscillations in the photoemitted current. These oscillations are found to depend upon the growth rate in the same manner as do reflecting high-energy electron diffraction intensity oscillations, occurring at the monolayer accumulation rate. We believe that they depend upon a cyclical variation in the step edge density on the growing surface and discuss the mechanism through which the oscillatory current may result from surface states or surface dipoles.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1806-1808 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first observation of band-gap energy reduction in Ga0.47In0.53As deposited on (100) InP by atmospheric pressure organometallic vapor phase epitaxy due to CuPt-type ordering. A reduction of more than 65 meV in the band-gap energy is observed for lattice-matched samples that show strong CuPt-like ordering by transmission electron microscopy. By comparison samples that show no CuPt-like ordering diffraction signatures, do not have reduced band-gap energies. Studies of the influence of growth parameters on the band-gap energy indicate a U-shaped dependence on the growth temperature with a minimum around 550 °C and decreasing band-gap energies with increasing growth rate (at a constant V/III ratio) over the range 0.5–4 μm/h.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 989-991 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on multijunction GaInP/GaAs photovoltaic cells with efficiencies of 29.5% at 1-sun concentration and air mass (AM) 1.5 global and 25.7% 1-sun, AM0. These values represent the highest efficiencies achieved by any solar cell under these illumination conditions. Three key areas in this technology are identified and discussed; the grid design, front surface passivation of the top cell, and bottom surface passivation of both cells. Aspects of cell design related to its operation under concentration are also discussed.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 878-880 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been shown that under certain growth conditions the pseudobinary semiconductor alloy GaInP shows cation site ordering into the Cu-Pt structure, and that this ordering results in a lowering of the band gap Eg from that of the disordered alloy. The Eg lowering is known to depend on growth conditions, including the orientation of the substrate. We study the dependence of Eg on epilayer thickness for GaInP grown by metal-organic vapor-phase epitaxy. For epilayers grown on singular (100) substrates under growth conditions conventionally used to produce ordered material, Eg decreases dramatically with increasing epilayer thickness: Eg for a 10-μm-thick epilayer is ∼40 meV lower than for a 1-μm-thick epilayer. This dependence of Eg on thickness can be understood in terms of the recently observed faceting of the GaInP growth surface.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two photoluminescence bands typically observed in partially ordered (GaIn)P are studied with a spatial resolution of 270 nm by use of scanning near-field optical microscopy at low temperature. Local luminescence spectra show a strong spatial variation of the low energetic emission in lineshape and peak position whereas the same attributes of the high energetic emission differ only slightly for all investigated areas of the sample. The intensities of both photoluminescence bands are anticorrelated in space on a 0.5–1.5 μm scale. TEM investigations show that the structure of the sample is inhomogeneous on the same length scale. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2347-2349 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report picosecond four-wave mixing experiments on Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates. The spectral behavior of the homogeneous linewidth in the range of the inhomogeneously broadened band gap excitonic resonance is found to be different for a more disordered as compared to a partially ordered structure. Whereas the former shows the normal alloy behavior, the behavior of the partially ordered sample supports the assumption that its structure consists of ordered domains with varying degrees of order. This means, in particular, that the main origin of the inhomogeneous broadening is different for the disordered and ordered case. In addition, a polarization dependence of the four-wave mixing signal is only observed for the more disordered sample. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3512-3514 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the optical constants of oxidized crystalline and low-temperature-grown (LTG) Al0.98Ga0.02As films, as determined by variable angle spectroscopic ellipsometry. Data were acquired at three angles of incidence over 240–1700 nm and fitted to a Cauchy dispersion function. For oxidized crystalline material, we observe a variation in the real index of ±0.5% for layer thickness variations of ±6%. We show that upon oxidation, LTG material can expand by 〉25% while crystalline material contracts by 〈2%. Atomic force microscopy analysis indicates thickness-dependent variations in the oxide microstructure. Additionally, an optical scattering loss of 2.1×10−4%/pass is calculated based on surface roughness measurements for a thin layer of oxidized crystalline material. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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