Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
59 (1986), S. 992-994
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A theory of alloy scattering of two-dimensional electron gas in quaternary III-V semiconductors is developed by assuming spherically symmetric square scattering potential randomly distributed in the crystal. The theory predicts a temperature-independent mobility. Electron mobilities have been calculated for two-dimensional electrons in Ga1−x Inx P1−y Asy and Ga1−x Inx P1−y Sby, with scattering potentials expressed in terms of the differences in the band gaps, the electron affinities, and the electronegativities of the constituent materials.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336584
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