Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6160-6163 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) and photoluminescence (PL) techniques were used to characterize the AlGaAs/GaAs heterojunction bipolar transistor (HBT) wafers grown by molecular beam epitaxy (MBE). The line shape of the PR GaAs signal is closely related to the cleanliness of the MBE system. The Franz–Keldysh oscillations of the GaAs signal become sharper, well defined, and the oscillation amplitude increases slightly as the MBE system is cleaned up. The dc current gain of the HBT devices was observed to increase accordingly. The origin for this correlation is discussed. The PL spectra of the HBT device wafers indicate that the intensity of the free-to-bound transition corresponding to the donor to valence band becomes strong in high gain device wafers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371669
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Characterization of buried pseudomorphic InGaAs layers using high-resolution x-ray diffraction (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3362-3366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thickness and composition of the InGaAs layer in GaAs/AlGaAs/InGaAs/AlGaAs/GaAs high-electron-mobility transistor devices were determined to within ±5 A(ring) and ±0.003, respectively, using high-resolution x-ray diffraction. The combined thickness of the capping AlGaAs and GaAs layers were also determined to within ±5 A(ring). Although the interference effects near the substrate peak in the diffraction pattern may be identical for structures with different InGaAs thicknesses, the peak from the buried InGaAs layer will be different. In other words, if the diffraction from the buried layer is measured, one can readily distinguish between structures whose interference peaks are otherwise the same. It is also shown that the use of different reflections removes the ambiguity associated with interference peaks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357461
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Photoreflectance study of pseudomorphic high electron mobility transistors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2607-2610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature photoreflectance (PR) measurements have been carried out on a series of pseudomorphic AlGaAs/InGaAs/AlGaAs high electron mobility transistor (HEMT) structures with different doping profiles grown by molecular beam epitaxy. The GaAs and AlGaAs features in the PR spectrum were studied and their origins were determined by a sequential etching method. It was found that the GaAs buffer layer and AlGaAs barrier layer dominate the GaAs and AlGaAs features in the PR spectrum, respectively. The electric fields for Franz-Keldish oscillations (FKOs) associated with the E0 transition of both GaAs and AlGaAs are affected by the doping on both sides of the InGaAs channel, but are not directly related to the channel carrier concentration. The aluminum composition in the AlxGa1−xAs layers was determined and compared with the results of FKO energy and the critical-point energy methods. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366074
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Role of misfit dislocations on pseudomorphic high electron mobility transistors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 748-750 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between structural defects and device performance of In0.21Ga0.79As/(Al,Ga)As high electron mobility transistors with different In0.21Ga0.79As channel thicknesses (75–300 A(ring)) was analyzed. Using triple axis x-ray diffraction and transmission electron microscopy, we determined that the presence of misfit dislocations along only one of the 〈110〉 directions did not impair device performance. In fact, the sample with the highest cutoff frequency possessed the misfit dislocations along one 〈110〉 direction. However, for thicker samples, with an orthogonal array of misfit dislocations, the device parameters were significantly degraded. We also determined that x-ray diffuse scattering correlates strongly with device performance, making this nondestructive technique useful for device performance evaluation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114081
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...