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Effect of coincident ion bombardment on the oxidation of Si (100) by atomic oxygen (1989)

Engstrom, J. R. ; Bonser, D. J. ; Engel, Thomas

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 2202-2204

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Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The effect of coincident ion bombardment on the oxidation of Si (100) by atomic oxygen has been examined under ultrahigh vacuum conditions by employing molecular beam techniques and x-ray photoelectron spectroscopy. Ion bombardment leads to a significant enhancement in the rate of oxidation. By modulating both the oxygen and ion (Ar+ ) fluxes several possible mechanisms for the enhanced rate can be eliminated. Of the remaining possibilities, a mechanism involving competition between ion-induced oxygen incorporation and sputtering appears most likely.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.102352

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