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  • 1
    Electronic Resource
    Electronic Resource
    Electronic and related properties of crystalline semiconducting iron disilicide (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7708-7712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band structure calculations for β-FeSi2 have been performed by the linear muffin-tin orbital method within the local density approximation scheme including exchange and correlation effects. A detailed analysis of the conduction and valence band structure around high-symmetry points has shown the existence of a quasidirect band gap structure in the material. It is experimentally confirmed that between the threshold energy of optical interband transition of 0.73 eV and the first direct gap transition with appreciable oscillator strength at about 0.87 eV there is a region in which direct transition of low oscillator strength and indirect transitions overlap. That explains the tricky behavior of β-FeSi2 in experimental investigations demonstrating it to be either a direct or indirect gap semiconductor. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362436
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  • 2
    Electronic Resource
    Electronic Resource
    Erbium luminescence in porous silicon doped from spin-on films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2679-2683 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium photoluminescence at room temperature and at 77 K has been observed from porous silicon doped with erbium from a spin-on silica gel film. Erbium incorporation into silicon dioxide at the surface of porous silicon and rapid thermal processing at temperatures higher than 1223 K were found to be a necessary prerequisite for erbium-related luminescence in porous silicon. No erbium diffusion into monocrystalline silicon from the spin-on films was observed. The depth-dependent erbium concentration in the bulk of porous silicon was determined by secondary-neutral- and secondary-ion-mass spectrometry depth profiling. The laterally resolved erbium distribution in the porous silicon was derived from energy-dispersive x-ray analysis. Possible mechanisms of erbium-related luminescence in porous silicon are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358735
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  • 3
    Electronic Resource
    Electronic Resource
    Spectral characteristics of visible light emission from porous Si: Quantum confinement or impurity effect? (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2727-2729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Emission and excitation spectra of visibly luminescing porous Si structures subjected to a long-term air impregnation are analyzed. A red shift of emission spectrum with increasing initial porosity is reported. A correlation of excitation spectra with the energy of Γ'25-Γ15 transition in Si monocrystal is found in the samples differing in the initial porosity. The results seem to be hard to explain in terms of the quantum-confinement models in their present state. An alternative model based on band-gap widening in heavily doped silicon structures is considered as well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356207
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  • 4
    Electronic Resource
    Electronic Resource
    Room-temperature formation of erbium-related luminescent centers in anodic alumina (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2272-2274 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescent Er-doped Al2O3 films have been fabricated at room temperature by a technique including magnetron deposition of Er-doped Al film on a silicon substrate and its subsequent electrochemical anodization. The films demonstrate strong Er-related photoluminescence at about 1.53 μm as recorded in the temperature range of 4.2–300 K. The effect is not influenced by annealing of the samples up to 200 °C. Upon annealing at 300–500 °C the luminescence intensity decreases, while above 600 °C it starts to recover. Annealing at 1000 °C restores the photoluminescence spectra to the initial level. The annealing peculiarities observed have been explained by dominant hydrogen outdiffusion at 300–500 °C, rearrangement of point defects at 600–800 °C, and recrystallization processes above 850 °C in the alumina film. Activation energies of these processes have been estimated to be 0.76 eV (for parabolic rate), 0.58 eV (for linear rate), and 0.46 eV (for linear rate), respectively. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121699
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  • 5
    Electronic Resource
    Electronic Resource
    Orientation effect in electronic properties of silicon wires (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1090-1091 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic properties of (100), (110), and (111) oriented H-terminated silicon quantum-size wires have been calculated within the self-consistent LCAO method. The quantum confinement induced direct band gap only appears in the (100) wires. Surface silicon d and p electrons are found to be responsible for the bottom of the conduction band while the top of the valence band are formed by p electrons of the core atoms. Possible reconstruction of the wire surface is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114458
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  • 6
    Electronic Resource
    Electronic Resource
    Theoretical and experimental study of interband optical transitions in semiconducting iron disilicide (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4410-4414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interband optical spectra of the semiconducting β phase of iron disilicide (β-FeSi2) were investigated in the energy range from 0.5 to 5.0 eV. The dielectric function and other optical functions were deduced from ellipsometric experiments and calculated within the local-density approximation by using the semirelativistic linear muffin-tin orbital method. Reasonable agreement between the calculated and measured data has been obtained. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367220
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  • 7
    Electronic Resource
    Electronic Resource
    Grain interaction effect in electronic properties of silicon nanosize films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 744-746 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic properties of both nanometer thickness (111) monocrystalline and nanocrystalline free standing silicon films were calculated within a self-consistent linear combination of atomic orbitals method. Grained nature of the nanocrystalline films is found to induce both a direct band gap and its reduction (down to about 2 eV) with respect to an isolated grain of same size. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118267
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  • 8
    Electronic Resource
    Electronic Resource
    Electronic properties of osmium disilicide (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 976-977 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic property calculation of OsSi2 performed by the linear muffin-tin orbital method within the local density approximation scheme has shown the material to be an indirect gap semiconductor with a gap value of 0.95 eV. A direct transition with appreciable oscillator strength at 1.14 eV is predicted. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118453
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  • 9
    Electronic Resource
    Electronic Resource
    Electroluminescence simulation of multiquantum well silicon structures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7219-7223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model of electroluminescence from the multiquantum well structure formed by alternated nanosize layers of silicon (Si) and calcium fluoride (CaF2) is proposed. Electron and hole tunneling through the CaF2 barriers is supposed to occur via Wentzel–Kramers–Brillouin mechanism. Carrier interband recombination in the Si wells is considered to produce photons. A simulation of current–voltage characteristics and luminescence properties is performed taking into account the geometry of the structure and the fundamental physical parameters of the materials involved. The electroluminescence is found to be characterized by a maximum intensity depending on the number of periods in the multiquantum wells. The electroluminescence intensity shows also a nonmonotonous dependence on the recombination coefficient and carrier concentration at the contacts. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370535
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  • 10
    Electronic Resource
    Electronic Resource
    Behaviour of implanted arsenic in silicon single crystals subjected to transient heating with incoherent light (1984)
    Springer
    Applied physics 33 (1984), S. 51-58 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 Tm ; 61.70 Wp ; 61.80 Ih
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The behaviour of ion-implanted arsenic in 〈100〉-oriented silicon single crystals exposed to continuous incoherent light from a xenon arc lamp has been analyzed with sheet resistivity measurements, Rutherford backscattering spectrometry, and ion channeling including angular scans. Redistribution, substitutionality, and electrical activity of arsenic were followed as functions of exposure time (6–20s) and induced temperature (1000°–1100°C). Redistribution was observed for implanted concentrations exceeding ∼4×1020 at.%/cm3. High substitutional fractions, between 95% and 99%, and low sheet resistivities were found for all annealed samples. Formation mechanism of arsenic substitutional solid solutions during transient heating of implanted layers is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01197086
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