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  • 1
    Electronic Resource
    Electronic Resource
    Ion beam etching of GaAs: Influence of etching parameters on the degree of radiation damage (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2297-2299 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of decreasing the radiation damage of GaAs during ion beam etching was investigated with the help of a photoluminescence spectra study of GaAs/InGaAs/GaAs heterostructures with near surface quantum wells. It was shown that the change of normal ion incidence to oblique and the decrease of the sample temperature to that of liquid nitrogen cause minimum radiation damage to GaAs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118841
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  • 2
    Electronic Resource
    Electronic Resource
    Polymer bonding process for nanolithography (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2246-2248 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a lithography process which originates from imprint lithography and offers advantages over it. Unlike imprint lithography, not only the sample but also the mold is covered with a thermoplastic polymer. The mold and sample are brought into contact, pressed together and heated above the glass transition temperature of the thermoplast, causing the two polymer layers to become bonded (glued) together. A special treatment of the mold and sample surface causes the polymer film to stick only to the substrate after cooling. The bonding occurs at pressures and temperatures lower than those usually applied in imprint technology, and eliminates problems in conventional imprint technology that are related to lateral transport of the polymer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406561
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  • 3
    Electronic Resource
    Electronic Resource
    The effect of ion implantation on polymer mask resistance to ion beam etching
    Amsterdam : Elsevier
    Vacuum 38 (1988), S. 1007-1009 
    Details
    ISSN: 0042-207X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0042-207X(88)90564-7
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  • 4
    Electronic Resource
    Electronic Resource
    Exciton-photon interaction in low-dimensional semiconductor microcavities (1998)
    Springer
    Journal of experimental and theoretical physics 87 (1998), S. 723-730 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The structure of the photon states and dispersion of cavity polaritons in semiconductor microcavities with two-dimensional optical confinement (photon wires), fabricated from planar Bragg structures with a quantum well in the active layer, are investigated by measuring the angular dependence of the photoluminescence spectra. The size quantization of light due to the wavelength-commensurate lateral dimension of the cavity causes additional photon modes to appear. The dispersion of polaritons in photon wires is found to agree qualitatively with the prediction for wires having an ideal quantum well, for which the spectrum is formed by pairwise interaction between exciton and photon modes of like spatial symmetry. The weak influence of the exciton symmetry-breaking random potential in the quantum well indicates a mechanism of polariton production through light-induced collective exciton states. This phenomenon is possible because the light wavelength is large in comparison with the exciton radius and the dephasing time of the collective exciton state is long.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.558714
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