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  • 1
    Electronic Resource
    Electronic Resource
    Room temperature electron cyclotron resonance chemical vapor deposition of high quality TiN (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 302-304 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality, gold-colored TiN was deposited at room temperature by decomposing TiCl4 in the downstream of an N2/H2 electron cyclotron resonance (ECR) plasma. The morphology of the as-deposited films was investigated by scanning electron microscopy, and the resistivity was measured using the four point probe technique. The films were uniform over 2 in. wafers, with resistivities of 100–150 μΩ cm. Auger electron spectroscopy was used for the determination of the Ti/N ratio and for the detection of contaminants, and shows that the as-deposited films were stoichiometric and chlorine free. The present results represent a major improvement in lowering the deposition temperature of TiN using ECR plasma-enhanced chemical vapor deposition with TiCl4 as reactant. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113525
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  • 2
    Electronic Resource
    Electronic Resource
    Electron cyclotron resonance chemical vapor deposition of silicon oxynitrides using tris(dimethylamino)silane (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3014-3016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new compound, tris(dimethylamino)silane was used as an organosilicon source for the deposition of silicon oxynitride thin films. The depositions were carried out at low substrate temperatures (〈150 °C) in an electron cyclotron resonance plasma enhanced chemical vapor deposition reactor. Films with compositions varying from Si3N4 to SiO2 were deposited on silicon substrates by varying the N2/O2 flow ratio to the plasma chamber. In situ ellipsometry measurements of the film optical index were well correlated with film composition. Auger electron spectroscopy showed that only low levels of carbon (〈3 at. %) were present, while Fourier transform infrared spectroscopy showed low levels of bonded hydrogen. The deposition rate of high quality Si3N4 was as high as 220 A(ring)/min.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110243
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  • 3
    Electronic Resource
    Electronic Resource
    Void formation at silicon nitride/silicon interfaces studied by variable-energy positrons (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 839-845 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Variable-energy positrons (VEP) were used to study the deppth distribution of defects in SiNx/Si structures fabricated using ditertiary butyl silane (CONSI 4000) as the silicon precursor in an electron cyclotron resonance plasma chemical vapour deposition system. Films were grown to thicknesses ranging from 500 to 3500 Å at substrate temperatures between room temperature and 400°C and under various plasma conditions. The VEP results give evidence for differing concentrations of very large open-volume defects at several of the SiNx/Si interfaces, confirmed by transmission and scanning electron microscopy. Their presence was correlated with non-reactive organosilicon adsorption on the substrates prior to the thin film deposition.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740211204
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