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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2251-2254 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report large and nonmonotonic dependences of the electro-optic (EO) coefficient r22 and the corresponding dielectric permittivity in pure LiNbO3 on the concentration of intrinsic defects related to the deviation from the stoichiometry of the crystal. This variation is caused mainly by the electro-mechanical contribution. A stoichiometric crystal possesses both large EO properties and resistance to optical damage which renders it much more suitable for use in laser Q-switching than the congruent crystal. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 180-181 (1992), S. 351-353 
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 67 (1998), S. 65-71 
    ISSN: 1432-0649
    Keywords: PACS: 78.20.Jq; 61.72.-y
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: 3 along the ferroelectric c axis in pure and chromium-doped crystals. We have studied four series of samples with various crystal compositions and doping concentrations to separate the influence of the intrinsic defects related to the non-stoichiometry and the effect of the introduction of chromium. In pure and slightly doped crystals, the electro-optic coefficient rc shows a non-monotonous dependence on the controlled crystal composition, which reflects a similar behaviour of the corresponding dielectric permittivity. In the highly Cr-doped crystals rc displays a large decrease with increasing Cr concentration whatever the crystal composition. The results have been discussed by means of the LiNbO3 structure and the substitution site dynamics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 67 (1998), S. 559-562 
    ISSN: 1432-0649
    Keywords: PACS: 78.20.Jq; 78.20.Nv; 61.43.-j
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: 1-x RbxSO4 for x varying between 0 and 0.50 were investigated by an ac modulation method based upon the Sénarmont arrangement. The electro-optic coefficient rc, and for the first time the coefficients r41 and r51 were determined with good accuracy in pure LiKSO4 around room temperature at a wavelength of 633 nm. The frequency dependence of the electro-optic coefficient rc was measured in the frequency range from 1 kHz up to 1 MHz. The values of the factor of merit ne 3rc of the mixed crystals LiK1-xRbxSO4 were obtained for the first time, for the concentrations x=0.05, 0.10, 0.20, and 0.50. The electro-optic properties are shown to be affected by the random presence of the rubidium ions in this disordered system.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1432-0649
    Keywords: PACS: 78.20.Jq; 61.10.-i; 77.84.Dy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. We report the dependence of the unit cell parameters and the EO coefficients on Zn doping in optical-damage-resistant LiNbO3:Zn crystals. Both properties depend in a non-monotonic manner on the Zn content. This is accounted for by different types of Zn ion incorporation into the lattice depending on the Zn concentration in the melt. Extrema observed in the concentration dependence of the EO coefficients at about 2–3 and 6.4 mol.% Zn correlate with an unusual concentration dependence of the unit cell parameters a and c. The low-concentration anomalies may be accounted for by a decrease of the Li vacancy concentration due to the Zn incorporation into Li sites. Anomalies at high concentrations are obviously due to a partial incorporation of Zn ions on Nb sites, which is reflected in the structure data. Anomalies in the concentration dependence of other optical properties at about 6–7 mol.% Zn reported recently are obviously related to a change in the localization of the Zn ions. The combination of high EO coefficients with a reduced optical damage for these concentrations make these crystals attractive for applications as Q-switching or electrooptical modulation.
    Type of Medium: Electronic Resource
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