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Dehydrogenation studies of amorphous silicon (1985)

Woodyard, James R. ; Bowen, David R. ; Gonzalez-Hernandez, J. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 57 (1985), S. 2243-2248

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The dehydrogenation of highly photoconductive amorphous silicon films has been studied using 15N,p nuclear reaction hydrogen depth profiling and isochronal anneals at temperatures between 300 and 500 °C. The studies shown that neither diffusion nor a first-order reaction are the rate limiting dehydrogenation mechanism for hydrogen concentrations between 5 and 40 at. %. Dehydrogenation is not rate limited by processes at the surface. The studies suggest that for concentrations above 5 at. % the dehydrogenation may be explained by second-order reaction kinetics involving the reordering of bonds. Below about 5 at. % a first-order process leading to dangling silicon bonds appears to dominate.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.334369

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