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  • 1
    Electronic Resource
    Electronic Resource
    Vapor Pressure and Derived Information of the Sodium Fluoride-Zir- conium. Fluoride System: Description of a Method for the Determination of Molecular Complexes Present in the Vapor Phase (1957)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 61 (1957), S. 337-344 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150549a014
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  • 2
    Electronic Resource
    Electronic Resource
    The Vapor Pressure of Sodium Fluoride (1957)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 61 (1957), S. 384-384 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150549a036
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  • 3
    Electronic Resource
    Electronic Resource
    Cohesive energies of the alkali hydrides and deuterides (1971)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 75 (1971), S. 1251-1255 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100679a014
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray diffraction and nuclear magnetic resonance studies of the relationship between electronic structure and the tetragonal distortion in zirconium hydride (ZrHx) (1984)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 918-923 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150649a018
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  • 5
    Electronic Resource
    Electronic Resource
    Structural characterization of SimGen strained layer superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4305-4313 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SimGen strained layer superlattice (SLS) structures were grown by molecular beam epitaxy on GexSi1−x buffer layers on 〈100〉 Si substrates to determine the effects of buffer layer composition, SLS thickness ratio, and superlattice periodicity, on the overall quality of these structures. X-ray diffraction methods were used to determine how closely actual periodicities and compositions met targeted values, and to evaluate the quality of these samples. In most instances the as-grown structures matched the targeted values to within 10%, though in some instances deviations of 20–25% in either the period or composition were observed. The quality of the SLS structures was greatly dependent on the composition of the buffer layer on which it was grown. SimGen SLS structures grown on Si- and Ge-rich buffer layers were of much higher quality than SimGem SLSs grown on Ge0.50Si0.50 layers, but the x-ray rocking curves of the SimGen samples indicated that they were far from perfect and contained moderate levels of defects. These results were confirmed by cross sectional transmission electron microscopy, which showed that the SimGem structures contained significant numbers of dislocations and that the layers were nonuniform in thickness and wavy in appearance. SimGen structures, however, displayed fewer defects but some dislocations and nonparallelism of layers were still observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350812
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  • 6
    Electronic Resource
    Electronic Resource
    Femtosecond real-time probing of reactions. V. The reaction of IHgI (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 7437-7450 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The dissociation reaction of HgI2 is examined experimentally using femtosecond transition-state spectroscopy (FTS). The reaction involves symmetric and antisymmetric coordinates and the transition-state is well-defined: IHgI*→[IHgI]
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457267
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  • 7
    Electronic Resource
    Electronic Resource
    Crystallization of amorphous Zr2Pd and Zr3Rh alloys (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 545-553 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability behavior of the metallic glasses a-Zr2Pd and a-Zr3Rh was studied by means of x-ray diffraction, differential scanning calorimetry (DSC), and isothermal annealing. While several a-Zr2Pd alloys each exhibit two exothermic peaks during the DSC heating sequence, three different types of exothermic behavior have been observed for a-Zr3Rh alloys with nominally identical stoichiometries. These variations in DSC behavior are probably related to different conditions during the rapid quenching procedures. The three types of differential scanning calorimeter behavior shown by a-Zr3Rh alloys include (1) two peaks of about 715 K and 790 K, (2) a single large peak at about 730 K, and (3) a strong peak at about 725 K with a much weaker peak at about 850 K. The a-Zr3Rh alloys of type (1) crystallize to form a tetragonal lattice that is a newly identified Zr3Rh phase of the D0e structure type. The a-Zr3Rh alloys of types (2) and (3) crystallize first to form a face-centered cubic lattice which appears to be an E93-type structure. Both the D0e and E93 phases are metastable and ultimately anneal to the Zr2Rh phase with the tetragonal C16-type structure. The formation of the Zr2Rh phases with either the C16 or E93 structure is accompanied by α-Zr. The a-Zr2Pd alloys undergo a two-step crystallization with the initial formation of a disordered body-centered-cubic phase followed by the tetragonal Zr2Pd phase with the C11b-type structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334735
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  • 8
    Electronic Resource
    Electronic Resource
    Electromechanical properties of Pb(Mg1/3Nb2/3)O3–7%PbTiO3 thin films made by pulsed laser deposition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6200-6202 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film capacitors of Au/Pb(Mg1/3Nb2/3)O3–7%PbTiO3 [PMN–(0.07)PT]/(La1/2Sr1/2)CoO3 were made by pulsed laser deposition on single crystal {001} MgO substrates. The PMN–(0.07)PT dielectric was perovskite dominated, and demonstrated functional behavior typical of relaxors. Electrostrictive behavior was observed at fields up to 200 kV cm−1, however, the maximum strain was disappointingly low at only ∼0.14%. The macroscopic electromechanical d33 and Q33 coefficients were determined using piezo-response atomic force microscopy. At 100 kV cm−1 the macroscopic Q33 was found to be (2.6±0.2)×10−2 C−2 m4. The crystallographic electrostrictive coefficient was determined using in-situ x-ray diffraction and at the same field found to be significantly higher: (4.9±0.2)×10−2 C−2 m4. Since these electrostrictive coefficients are of the same order of magnitude as found in single crystal experiments (2.5–3.8×10−2 C−2 m4), it appears that the low out-of-plane strain is simply the result of poor polarizability in the thin films. An effective Q13 component of the electrostrictive tensor was also determined, and found to be ∼−0.32 ×10−2 C−2 m4. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1465116
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of thermal expansion mismatch on the dielectric peak temperature of thin film relaxors (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2295-2301 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strongly oriented thin film capacitors of Pb(Mg1/3Nb2/3)O3 were made by pulsed laser deposition and found to show a decreased temperature of the dielectric maximum (Tm) relative to bulk. The in-plane strain was measured and found to be compressive, a feature that is normally associated with increased Curie temperatures in conventional ferroelectrics. Other features, such as a more pronounced frequency dependence of Tm in thin films than in bulk, were also noted. An attempt to rationalize these differences by consideration of thermal expansion mismatch between substrate and film is presented. The shifts in Tm are modeled using a semiempirical Landau–Ginzburg–Devonshire model, in which the first coefficient of the thermodynamic potential has been modified to have a quadratic, rather than linear, temperature dependence. The predictions of the model are compared with experimental results from this work and other reports on relaxor thin films extracted from the literature. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429761
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  • 10
    Electronic Resource
    Electronic Resource
    Transport properties of NdNiO3 thin films made by pulsed-laser deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 606-608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed-laser deposition was used to make thin films of NdNiO3 on a variety of substrates. The films were found to be single phase perovskite in all cases. However, the transport behavior varied strongly as a function of the substrate used: the films were semiconducting on MgO, but showed a metal-semiconductor phase transition on SrTiO3 and NdGaO3. The best electrical-switching properties corresponded to films grown on NdGaO3, with the resistivity changing abruptly by more than two orders of magnitude at TMI∼185 K. Very thin films (∼35 nm) were also grown on NdGaO3 substrates to investigate the epitaxial strain effect on the transition. It appears that biaxial tensile strain stabilizes the high temperature metallic phase, thus lowering TMI. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371912
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