ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
InGaAsP/InP single-quantum well and multiquantum-well (MQW) structures have been successfully grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The quantum wells grown consist of 1.3- and 1.5-μm composition InGaAsP, with barriers of InP. Layer thicknesses vary from 18 to 1300 A(ring) for the various structures grown. Analysis of these structures by low-temperature photoluminescence reveals distinct, sharp luminescent peaks, with half-widths from 4.8 to 13 meV. Cross-sectional transmission electron microscopy (XTEM) and Auger spectroscopy of the quantum-well structures reveals extremely sharp interfaces and homogeneous composition, demonstrating the feasibility of LP-MOCVD for the growth of very thin epitaxial layers. This preliminary data indicates that the growth of MQW structures for the next generation of laser diodes (i.e., MQW-distributed-feedback lasers), with monolayer interfacial abruptness, is possible by LP-MOCVD.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.347624
Permalink