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  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Crystal Growth 58 (1982), S. 399-408 
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1067-1075 
    ISSN: 0392-6737
    Keywords: Direct energy conversion and energy storage ; PACS 85.60.Gz ; Photodetectors and infrared detectors
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary The free convection in the melt during the crystal growth of small-gap semiconductors, and its influence on the electrical properties are discussed. Dimensionaless parameters of the fluid flow, electrical properties of PbTe, Pb1−x Sn x Te and Hg1−x Cd x Te single crystals, grown by vertical Bridgman technique at very low velocity, and some structures, found in these materials, support the presence of free convection.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 20 (1985), S. 2990-2996 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Scanning electron micrographs, carrier concentration and mobility measurements of sintered doped and undoped PbTe powder compacts are presented as the basis for a qualitative description of the origin of the electrical property change which takes place in powder technique fabrication. A tentative explanation of the changes in the electrical and analogously in thermoelectrical properties, has been given as being due to an increase of the dislocation density when crushing and pressing take place. These dislocations produce a large concentration of electrically different active point defects when they intersect. An additional n-type carrier increase, during firing, confirms this hypothesis.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 15 (1980), S. 918-924 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The effect of the pressing and sintering processes on some typical properties (carrier mobility and Hall effect) is analysed. In order to do this, samples obtained from powdered and pressed materials were submitted to a slow sintering process. During and after the thermal treatment, the samples were examined using both transport measurements and a scanning electron microscope in order to evaluate the sintering process. Thus some of the defects which influence electrical property variations have been seen.
    Type of Medium: Electronic Resource
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