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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5800-5808 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependent contactless surface photovoltage measurements by photoelectron spectroscopy have been performed on cleaved (100) surfaces of pyrite (FeS2) single crystals. The results have been fitted by thermionic emission, recombination, and tunneling models for the majority carrier transport to the surface. Neither of them is able to explain the small photovoltages consistently. By calculating electronic defect levels due to the sulfur deficiency of pyrite a high number of defect states in the band gap is obtained. As a consequence a nonuniform depletion layer is expected with a part of the band bending potential falling off at a very small distance near the surface. The small photovoltages can be explained by a tunneling of majority carriers through the narrow barrier and by recombination losses due to the defects.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science 303 (1994), S. L361-L366 
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science 314 (1994), S. L931-L936 
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 52 (1991), S. 171-179 
    ISSN: 1432-0630
    Keywords: 68.65 ; 79.60.Eq
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The intercalation of sodium and potassium into the layered semiconductor SnS2 has been investigated by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), and ion scattering spectroscopy (ISS). After deposition of the alkali metals onto (0001) cleavage planes of SnS2 in ultra high vacuum (UHV), semiconducting intercalation phases were formed. They seem to be homogeneous and disordered under the given experimental conditions. The valence electrons of the alkali metals are transferred into electronic states of the host lattice, whose valence band density of states changes significantly during intercalation. The underlying changes of the binding properties of the host lattice are discussed. The course of intercalation can be separated into three phases. During an induction period the concentration of the alkali metal on the surface remains very small, the electronic states of the substrate are shifted by band bending. During an intercalation period the topotactic reaction proceeds. After reaching saturation compositions of the intercalation phase at the surface, the alkali metal diffuses into the bulk. Crystal or surface defects seem to have a significant influence on the kinetics of intercalation and on the stoichiometry of the intercalation compounds.
    Type of Medium: Electronic Resource
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