ISSN:
0392-6737
Keywords:
Optoelectronic devices
;
Conference proceedings
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Summary The striking optical properties of porous silicon (PS) show a twofold aspect typical of an ordered and a disordered material, respectively. Raman, electron microscopy, and resonant photoluminescence studies indicate that the light emission originates from crystalline regions. On the contrary, several features, like the non-exponential decay of photoluminescence (PL), the broad emission spectrum, the photoluminescence fatigue under light exposure etc. are typical of a disordered material and reminiscent of similar effects founde.g. in amorphous semiconductors. These twoapparently conflicting aspects have for a long time hindered the understanding of the basic light emission mechanism. In this paper we report new optical data showing that disorder in porous silicon leads to strong carrier localisation. Light emission in PS is suggested to occur through transitions involving localized states.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02464689
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