Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Deposition of amorphous SiNxH films on InP in the presence of AsH3 (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2142-2143 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon nitride (a-SiNxH) films have been deposited on InP substrates by the low-temperature (185 °C) plasma enhanced chemical vapor deposition technique in order to realize metal-insulator-semiconductor capacitors. It has been found that the electronic properties of the InP-insulator interface are greatly improved if the insulator deposition is carried out in the presence of AsH3 during the first stage of the process (interface state density in the range of a few 1011 eV−1 cm−2 in the upper part of the gap). The deposited films exhibit very high resistivity (1017 Ω cm) and high breakdown voltage (3×106 V/cm). In similar conditions, no beneficial effect of PH3 during the deposition has been noticed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98973
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Visible light emission at room temperature from anodized plasma-deposited silicon thin films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1552-1554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ boron-doped hydrogenated silicon films plasma-deposited on various conductive substrates (including transparent oxides on glass) have been anodized in hydrofluoric acid solutions and subsequently electrochemically oxidized in an aqueous electrolyte. At room temperature, the resulting layers yield visible photoluminescence and electroluminescence intensities and spectral shapes similar to those of p-type crystalline porous silicon obtained in the same way. The results demonstrate the technological feasibility of light-emitting devices by applying electrochemical processes to deposited silicon-based films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107493
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...