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  • 1
    Electronic Resource
    Electronic Resource
    Transport mechanisms in ZnO/CdS/CuInSe2 solar cells (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4694-4699 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport mechanisms in ZnO/CdS/CuInSe2 solar cells prepared by ARCO (now Siemens) Solar Inc. have been analyzed by measurements of current versus voltage at different temperatures in the dark, short-circuit current versus open-circuit voltage at different temperatures in the light, spectral response of quantum efficiency, and junction capacitance. In the dark, recombination in the depletion region and/or thermally assisted tunneling are the dominant transport mechanisms. The observation of a smaller open-circuit voltage than would be predicted from the dark transport parameters is the result of a small change in the transport parameters under illumination, probably without a change in transport mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346148
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of high-field-enhanced emission rates with the constant capacitance-voltage transient technique (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2734-2738 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a new method for determining the trap level, doping concentration profiles, and enhanced emission rates caused by a high field which is accurate even in the presence of high-trap concentrations with a nonuniform profile. The constant capacitance-voltage transient technique is applied in this method. The amplitude of the transient voltage and the reverse-bias voltage at the beginning of the emission cycle are used for the determination of trap level and doping concentration profiles, respectively. The field enhanced emission rate is determined from the initial slope of the transient signal. The midgap level in GaAs is measured in order to test this method. The effects of both junction leakage current and free-carrier tail on the trap concentration and emission rate measurements are discussed together with the high-field effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342761
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of crystallographic polarity of CdTe crystals with Auger electron spectroscopy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 924-927 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallographic polarity of CdTe crystals has been studied with Auger electron spectroscopy. The polarity of various surfaces could be determined by normalizing the low-energy Te (NOO) peak with the high-energy Te (MNN) peak. Upon comparing the normalized ratios from both {111} surfaces, the ratio from (111) Te surfaces was found to be about 1.3 times that from (111) Cd surfaces. The identified polarity was consistent with recent results of anomalous absorption of x rays, the convergent beam method of transmission electron microscopy, and chemical etching. Air-cleaved {110} surfaces of CdTe crystals and surfaces of pure Te crystals were studied for comparison as well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338143
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Materials for Photovoltaics (1990)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 20 (1990), S. 19-50 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.20.080190.000315
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Electronic Transport in Polycrystalline Films (1975)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 5 (1975), S. 201-224 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.05.080175.001221
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    The Solid State (1954)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Physical Chemistry 5 (1954), S. 199-214 
    Details
    ISSN: 0066-426X
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.pc.05.100154.001215
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    Paper (German National Licenses)
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