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  • 1
    Electronic Resource
    Electronic Resource
    Traps and Trapping Processes (1953)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 57 (1953), S. 785-790 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150509a011
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  • 2
    Electronic Resource
    Electronic Resource
    Corrections to the constant photoconductivity method for determining defect densities, with application to amorphous silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5766-5777 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The constant photoconductivity measurement (CPM) technique has been widely used to determine the density of defects in thin films of materials where only a small absorption coefficient exists for these defects, particularly in determining the dangling-bond density in hydrogenated amorphous silicon. Interpretation and modeling in the literature assume that CPM gives an accurate value for the density of defects present. The limitations of this method are examined as a function of several defect parameters, and particularly as a function of the Fermi energy, in models consisting of one level, a Gaussian distribution of levels, two independent levels, and the levels typical of a multivalent defect, applying the results of the latter to actual data on optical degradation kinetics in amorphous silicon. It is concluded that a prerequisite for reliably relating CPM-determined densities to actual defect densities is a knowledge of the relative location of the equilibrium Fermi level and the energy level of the defect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351931
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  • 3
    Electronic Resource
    Electronic Resource
    Ion-assisted doping of p-CdTe films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6406-6414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-assisted doping has been used to control the phosphorus incorporation and p-type doping of CdTe epitaxial films. Ion dose, ion energy, growth temperature, and growth rate were all varied. A saturated carrier density of 2×1017 cm−3 was observed, although secondary ion mass spectroscopy analyses of several films indicated a continuous increase in phosphorus concentration in the films with increasing ion dose. Hole mobilities, majority-carrier lifetimes, and minority-carrier lifetimes were measured as a function of carrier density. n-CdS/p-CdTe heterojunction solar cells were prepared to further characterize the CdTe films for solar cell applications. Spectral response measurements indicated that both the minority-carrier lifetime and the interface collection function decreased with increases in carrier density. Such reduced values were not seen for CdS/CdTe heterojunctions prepared on P-doped single-crystal CdTe with high carrier densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346860
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  • 4
    Electronic Resource
    Electronic Resource
    Interpretation of the activation energy derived from a stretched-exponential description of defect density kinetics in hydrogenated amorphous silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8659-8661 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: At least three quantities have been referred to as "activation energies'' in association with fits to metastable defect kinetics in hydrogenated amorphous silicon. Most commonly cited is Eτ, the activation energy determined from stretched-exponential fits to kinetics data measured over a range of temperatures. The stretched exponential can also be written in terms of a rate constant, K, which has been reported as being thermally activated. In addition, a stretched-exponential model describing defect kinetics includes an energy, E2, in its rate equation. In this article, we clarify the interpretations of Eτ, EK, and E2, and discuss the possible physical significance of Eτ.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353378
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  • 5
    Electronic Resource
    Electronic Resource
    Transport measurements in p-type CdTe single crystals and ion-beam doped thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8359-8363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical transport properties of phosphorus-doped p-type CdTe single crystals and phosphorus-ion-beam doped, homoepitaxial thin films have been investigated by means of van der Pauw Hall effect and resistivity measurements as a function of temperature from 8 to 400 K. Analysis of the data indicates a maximum doping level greater than 2×1017 cm−3 in the films, at least as high as in the single crystals. Phosphorus has an ionization energy of about 40 meV, the degree of compensation is smaller in the films, room temperature mobilities of the films are lower than those for single crystals by about 20%, and the temperature dependence of mobility is similar for both crystals and films. Impurity scattering is dominant at lower temperatures and polar mode scattering is dominant at higher temperatures with a maximum mobility at 150–190 K. Both the single crystals and the ion-assisted doped films show a temperature independent resistivity at temperatures below 40 K, indicating the presence of impurity band conduction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353428
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  • 6
    Electronic Resource
    Electronic Resource
    Limitations on models describing the kinetics of light-induced defect creation in hydrogenated amorphous silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5246-5247 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two quite different models have indicated their ability to describe the experimental data for the kinetics of light-induced defect creation in hydrogenated amorphous silicon at or quite near room temperature. These have been called the "t1/3'' model and the "stretched exponential'' model. When measurements are made at different temperatures, however, the experimental data can still be described completely by the stretched exponential model with a change in the value of the stretch parameter, which may reasonably be a function of temperature, but they no longer follow a t1/3 dependence. Since the t1/3 dependence is based on a particular physical mechanism for defect creation, it is concluded that this mechanism is not applicable to hydrogenated amorphous silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350582
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical properties of CdTe films and junctions (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 400-410 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline films of CdTe have been deposited on graphite substrates, and homoepitaxial films on single-crystal CdTe:P substrates, with hole densities as high as 1.5×1016 cm−3 without intentional doping of the films, using close-spaced vapor transport. The dependence of hole density in the films on the properties of the source, the properties of the substrate, the growth rate, and the substrate temperature, indicates that the doping of the films is the result of a complex interaction between out-diffusion of mobile impurities (if present) from the substrate and intrinsic defects. The capacitance-versus-voltage-indicated hole density decreases slowly with time under a Schottky barrier, but not at a free film surface or under a CdS/CdTe heterojunction. CdS/CdTe solar cells have been prepared using these films, with solar efficiencies greater than 6%. The junction properties of CdS/CdTe heterojunctions are compared with those of In/CdTe Schottky barriers as a function of temperature; transport is dominated by tunneling below room temperature and by interface recombination above room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334764
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  • 8
    Electronic Resource
    Electronic Resource
    Measurement and control of ion-doping-induced defects in cadmium telluride films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2673-2679 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial p-type CdTe films were grown by coevaporation of CdTe and phosphorus in vacuum, where the phosphorus vapor was ionized and accelerated toward the substrate. Hole densities up to 2×1017 cm−3 were obtained using an ion energy of 60 eV. Effects of residual ion damage were observed using cross-sectional transmission electron microscopy, etch-pit density, and minority-carrier diffusion length measurements. This ion damage is dependent on both the ion dose and the ion energy. Reducing the ion energy below 60 eV results in lower doping densities, but using electron irradiation and Cd overpressure during deposition makes it possible to achieve equivalent doping levels for 20 eV ions while reducing the ion damage. At an ion energy of 20 eV, using electron irradiation of the growing film, and a 0.2% overpressure of Cd, films with hole density of 1×1017 cm−3 and diffusion length of 0.35 μm were obtained. Photovoltaic behavior of the films deposited in different conditions was tested by fabricating n-CdS/p-CdTe heterojunctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356220
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  • 9
    Electronic Resource
    Electronic Resource
    Unique correlation of the Fermi energy with the metastable defect density in amorphous silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1571-1576 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper reports an empirically based correlation between the metastable defect density and the value and temperature dependence of the Fermi energy in undoped hydrogenated amorphous silicon. According to this correlation, to specify two of the three quantities: Fermi energy, defect density, and temperature, is to specify the third, independent of the history of the sample. Almost 300 measurements of dark conductivity over a wide range of defect densities and temperatures, obtained in the course of measuring the kinetics of optical degradation of amorphous silicon at four temperatures, were subjected to analysis. A detailed empirical summary of these data is given, since their relevance extends beyond this present work. A model with two different types of multivalent defects whose relative density changes with total defect density is the simplest model consistent with the data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356393
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  • 10
    Electronic Resource
    Electronic Resource
    Values of capture cross sections of metastable defects in hydrogenated amorphous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1926-1934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of defect density, photoconductivity, and dark conductivity are used to obtain information about the values of the electron capture cross sections of charged and neutral metastable dangling-bond defects in high-quality, undoped, hydrogenated amorphous silicon at room temperature. Sixty measurements, obtained in the process of optical degradation experiments as a function of time at four different temperatures, have been analyzed using photoconductivity models corresponding to either one or two types of discrete-level, multivalent defects. A model with two types of defects is able to accurately describe both dark conductivity and photoconductivity results, and gives the following average values: an electron capture cross section of about 1×10−16 cm2 for neutral centers of both higher-lying (density not increased by light) and lower-lying (density increased by light) defects, of about 2×10−16 cm2 for positively charged higher-lying defects, and of about 20×10−16 cm2 for positively charged lower-lying defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361082
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