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  • 1
    Electronic Resource
    Electronic Resource
    The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4365-4369 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diodes with shallow p+n junctions were contacted with titanium silicide films which were formed by ion beam mixing with germanium. The leakage current of these diodes was observed to be dominated by a generation mechanism in the space charge layer. Deep level transient spectroscopy and secondary-ion mass spectroscopy measurements revealed that ion beam mixing with heavy ions leads to recoil implantation of titanium atoms into the silicon substrate. The temperature and reverse bias behavior of the leakage current could be consistently explained by Shockley–Read–Hall generation mechanism [Phys. Rev. 87, 385, 387 (1952)] and by Poole-Frenkel barrier lowering [Phys. Rev. 54, 647 (1938)] of the double donor level Ti+/++ at Ev+0.2 eV.4
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350796
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  • 2
    Electronic Resource
    Electronic Resource
    Interface properties of metal-oxide-semiconductor structures on n-type 6H and 4H-SiC (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7814-7819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work reports on the interface properties of metal-oxide-semiconductor (MOS) structures formed by thermal oxidation of n-type silicon carbide (SiC). The SiC layers, grown homoepitaxially on the silicon-face of 6H-SiC and 4H-SiC substrates, were oxidized at 1100 °C in dry or wet atmosphere. The interface properties of the MOS structures were investigated using both, the Terman and the high-low frequency method. The validity of these methods for wide band-gap semiconductors is clarified in a short theoretical analysis. The experimental results reveal moderate densities of interface states for MOS devices on 6H-SiC as well as on 4H-SiC. Only minor differences were observed between both polytypes. Current-voltage measurements prove earlier results and show good quality independent of the polytype used as substrate material. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362389
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  • 3
    Electronic Resource
    Electronic Resource
    Reliability of metal–oxide–semiconductor capacitors on nitrogen implanted 4H-silicon carbide (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2943-2948 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 4H-SiC epitaxial layers were implanted with nitrogen up to doses of 1×1015 cm−2 and annealed at different temperatures. Atomic force microscopy revealed that the roughness of the SiC surface increased with the annealing temperature. It was shown that the oxide grows thicker on substrates with doping levels exceeding 1×1018 cm−3. The barrier height at the SiC/SiO2 interface, determined by voltage ramping on metal–oxide–semiconductor capacitors, decreased with increasing implantation dose. This decrease was attributed to residual implantation damage. Constant current injection experiments revealed an opposite charge buildup at the SiC/SiO2 interface for the highest implantation dose compared to samples with no implantation. It was shown that the breakdown behavior can be improved by annealing at 1700 °C compared to 1450 °C despite a higher surface roughness. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368399
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  • 4
    Electronic Resource
    Electronic Resource
    Dielectric strength of thermal oxides on 6H-SiC and 4H-SiC (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1665-1667 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work reports on the dielectric strength of oxide layers formed by thermal oxidation of silicon carbide (SiC). SiC epilayers grown homoepitaxially on the silicon face of 6H-SiC and 4H-SiC substrates were oxidized in dry or wet ambient at 1100 °C. The dielectric strength was investigated using metal–oxide-semiconductor capacitors and was found to be tightly bound to 10 MV/cm for oxide thicknesses around 65 nm and independent of the SiC polytype and substrate doping. Considering the current-voltage characteristics in the prebreakdown region, dry oxides exhibit superior quality. Fowler–Nordheim tunneling was identified as the limiting current mechanism in the dry oxides. The corresponding barrier heights between the two SiC polytypes and thermal silicon dioxide were determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112904
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    Paper (German National Licenses)
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