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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Environmental science & technology 27 (1993), S. 1312-1318 
    ISSN: 1520-5851
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4002-4007 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth kinetics of an amorphous (a-)interlayer in polycrystalline Zr and Hf thin films on (111)Si have been investigated by cross-sectional transmission electron microscopy. The growth of the a-interlayer in group-IVb metals and silicon systems was found to exhibit similar behaviors. The growth was found to follow a linear growth law initially. The growth rate then slows down and deviates from a linear growth law as a critical thickness of the a-interlayer was reached. Crystalline silicide (ZrSi or HfSi) was found to nucleate at the a-interlayer/Si interface in samples after prolonged and/or high-temperature annealing. Silicon atoms were found to be the dominant diffusing species during the formation of amorphous alloys. The activation energy of the linear growth and maximum thickness of the a-interlayer were measured to be 1.4 eV, 17 nm and 1.2 eV, 27 nm in Zr/Si and Hf/Si systems, respectively. The correlations among the differences in atomic size between metal and Si atoms, growth rate and activation energy of the linear growth, critical and maximum a-interlayer thickness, the largest heat of formation energy for crystalline silicides, the calculated free-energy difference in forming amorphous phase, as well as the atomic mobility in Ti/Si, Zr/Si, and Hf/Si systems are discussed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2161-2168 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth kinetics of amorphous interlayer (a-interlayer) formed by solid-state diffusion in ultrahigh vacuum deposited polycrystalline Nb and Ta thin films on (111)Si have been investigated by cross-sectional transmission electron microscopy. The growth of a-interlayers in Nb/Si and Ta/Si systems was found to exhibit similar behaviors. The growth was found to follow a linear growth law initially in sample annealed at 450–500 °C and 550–625 °C for Nb/Si and Ta/Si, respectively. The growth then slows down and deviates from a linear growth law as a critical thickness of a-interlayer was reached. The activation energy for the linear growth of a-interlayer was found to be 0.8±0.3 and 0.9±0.3 eV for Nb/Si and Ta/Si, respectively. The correlations among difference in atomic size between metal and Si atoms, growth rate and activation energy of the linear growth, critical and maximum a-interlayer thickness, the largest heat of formation energy for crystalline silicides, the calculated free energy difference in forming amorphous phase as well as atomic mobility in Ti/Si, Zr/Si, Hf/Si, Ta/Si, and Nb/Si systems are discussed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 80 (1997), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A mixture of hexacarbonyl of chromium and molybdenum ((Cr,Mo)(CO)6) was used to deposit oxycarbide films on stainless steel at temperatures of 175°–450°C. Through the analysis of deposition kinetics in various temperature regions, the controlling mechanism was determined to be exothermic surface reactions. Activation energies of the low- and medium-temperature regions were determined to be 71.2 and −60.1 kJ/mol, respectively. Some properties including densities, composition, and crystalline phases of the films were investigated. Results revealed that the chromium content of coating products increased as the temperature increased. The dominating surface reactions switched as temperature increased, because of the increase of chromium content in the precursor gas. Hence, the coating rate and density increased to a maximum, then decreased as the coating temperature was increased to 275°C. Deposited phases were determined by X-ray diffractometry, and the relationship with film density phases has been discussed, using their microstructural textures from scanning electron microscopy micrographs. Corrosion resistance was measured by an electrochemical method. The films obtained in the low- and medium-temperature regions improved the corrosion resistance of stainless-steel substrates by a factor of 24. In addition, the latter case showed the effect of passive protection and was an optimized selection for corrosive protection. The relationship of the improvement of corrosion resistance, physical properties, and the contribution of composed phases was discussed.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 74 (1952), S. 4701-4702 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 75 (1953), S. 918-920 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 76 (1954), S. 6054-6058 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2105-2112 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The extended defects induced in silicon by high energy implantation (1.5 MeV B and 2.6 MeV P) have been investigated by plan-view and cross-sectional transmission electron microscopy studies and defect etching measurements. The threading dislocations were identified to be long dislocation dipoles generated in the region of the ion projected range which grew up to the surface. The formation of threading dislocations is shown to have a strong dependence on the implantation dose and O concentration. After 900 °C annealing, a high density of threading dislocations was formed for B and P implants in a dose range of 5×1013–2×1014 cm−2 and 5×1013–3×1014 cm−2, respectively. The threading dislocation density in B-implanted Czochralski Si substrates was found to be much higher than that in B-implanted epitaxial Si substrates. This difference is attributed to the strong pinning effect of oxygen immobilizing dislocations in Czochralski substrates. Because P impurities are also efficient at pinning dislocation motion in Si, a high density of threading dislocations was observed even in epitaxial Si substrates with P implantation. Two-step annealing with a first step at 700 °C (to precipitate oxygen) and a second step at 900 °C was found to be very effective at eliminating the formation of threading dislocations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 550-559 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first experimental operation of overmoded first and second harmonic gyrotwystron amplifier configurations. Both devices utilize a single cavity which is driven near 9.87 GHz in the TE011 mode, heavily attenuated drift tubes, and long tapered output waveguide sections. A magnetron injection gun produces a 460 kV, 245 A beam with a maximum average perpendicular-to-parallel velocity ratio approximately equal to one. The axial magnetic field profile is sharply tapered in the output section. Peak powers above 21 MW are achieved in 1 μs pulses with an efficiency exceeding 22% and a large signal gain near 24 dB in the first harmonic tube. The second harmonic tube achieves nearly 12 MW of the peak power with an efficiency of 11% and a gain above 21 dB. First harmonic amplifier performance is limited principally by competition from a fundamental mode output waveguide interaction; the second harmonic tube is limited by both travelling wave output modes and by a down-taper oscillation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4211-4215 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that a Au/Ge/Pd layered structure can result in low contact resistivities (∼10−6 Ω cm2) to n-GaAs processed in three temperature ranges (175–200, 340–350, and 425–450 °C). The contacts processed below the Au–Ge eutectic temperature (361 °C) show good surface and interface morphology, thermal stability, Au wire bondability, and reproducibility. The ohmic contact formation mechanisms are also presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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