ISSN:
1057-9257
Keywords:
Chemical vapour deposition
;
Copper
;
Copper oxide
;
Scanning electron microscopy
;
MOCVD
;
Surface morphology
;
Carrier gas
;
Cu(acac)2
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
The unsubstituted bis-β-diketonato complex of copper, Cu(acac)2 (acac = pentane-3, 5-dionato), has been used to deposit both elemental copper and copper oxide thin films by metal-organic chemical vapour deposition (MOCVD). For all Cu(II) bis-β-diketonates, growth of oxygen-free layers requires the breakage of four copper-oxygen bonds present in the precursor. The influence of carrier gas composition on deposit morphology has been examined for six parameter sets: both hydrous and anhydrous streams, each for reducing (H2), inert (Ar) and oxidising (O2) environments.
Additional Material:
3 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/amo.860010203
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