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  • 1
    Electronic Resource
    Electronic Resource
    Enhanced mechanical and magnetic properties of granular metal thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3275-3280 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanical properties of Ag-Al2O3 and Ni-Al2O3 granular metal films, as well as the magnetic behavior of the nickel-based films, is presented. Enhancements in the mechanical properties of these materials, as measured by low load indentation techniques, were observed for a metal volume fraction p of about 0.55. This volume fraction corresponded to the percolation threshold pc as determined from the magnetic measurements. A peak in the compliance as a function of p was observed, similar to elastic anomalies reported for small bilayer period superlattices. A discontinuity in the rate of change of hardness as a function of p was also observed, and believed to result from a change in deformation mechanism at pc.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349286
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  • 2
    Electronic Resource
    Electronic Resource
    Mechanical properties of nanocomposite granular metal thin films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3387-3393 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanical properties of nanocomposite Ag-Al2O3 and Fe-SiO2 granular metal films were investigated by low-load indentation and laser ultrasonic methods. A discontinuity in the rate of change of hardness as a function of metal volume fraction was observed near the percolation threshold for the metal. However, the sign of the rate of change was different for the two systems. It is suggested that this discontinuity was the result of a change in deformation mechanism as the percolation threshold for the softer phase was crossed. The elastic moduli of the Ag-Al2O3 films as measured by a laser ultrasonic technique displayed a rule-of-mixtures-type behavior, in contrast to nanoindentation measurements that gave a peak in the apparent compliance. Indentation crack testing indicated that the toughness increased in the Ag-Al2O3 system when the metallic phase was introduced into the ceramic, but that the Fe-SiO2 system displayed unexpected and novel fracture behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357465
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal expansion of Ni/Cu multilayers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4567-4570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The coefficient of thermal expansion of electrodeposited Ni/Cu multilayers was obtained by measuring the evolution of membrane resonances and hence the tension as a function of temperature. The apparent thermal expansion coefficient of the multilayer membranes increases as the interface density of the multilayers increases. This increase is analyzed in terms of stress relaxation resulting from sliding of nonperfectly bonded interfaces. The analysis permits the normalization of all thermal expansion data of the Cu/Ni multilayers with layer thicknesses ranging from 20 to 800 nm but not of the thinnest layers, 2 nm thick. The results are consistent with the idea that interfacial adhesion improves as the layer thickness becomes very small, favoring epitaxial growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357289
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  • 4
    Electronic Resource
    Electronic Resource
    Alternative approach to nanocomposite synthesis by sputtering (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1853-1855 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method is presented which circumvents the usual thermodynamic limitations (alloying and compound formation) in fabricating phase-separated materials. This opens whole new classes of materials that can be prepared as particulate composites.This method utilizes sputtering at high pressures (0.2–0.6 Torr) in a thermal gradient to produce nanoscale (〈15 nm diameter) particles, which are then embedded in a matrix produced by normal sputtering. The microstructure and microhardness of 0.5-μm-thick composites of molybdenum particles (3–12 nm average particle size) in aluminum are presented as examples. This system cannot be prepared by the conventional phase separation technique of cosputtering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103067
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  • 5
    Electronic Resource
    Electronic Resource
    Nanoindentation study of the mechanical properties of copper-nickel multilayered thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1862-1864 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanical properties of multilayered Cu-Ni thin films with bilayer thicknesses of 1.6–12 nm were investigated by a nanoindentation technique. Force-displacement curves generated during loading and unloading of a diamond tip indenter were used to determine the hardness and elastic properties of the films. No enhancement in the elastic properties (supermodulus effect) was seen, but an enhancement in the hardness was observed. It is suggested that the enhancement, which displayed a Hall–Petch-type behavior, can be understood as owing to dislocation pinning at the interfaces analogous to the mechanism of grain boundary hardening.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103070
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  • 6
    Electronic Resource
    Electronic Resource
    Reaction kinetics of nickel/silicon multilayer films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 795-797 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the use of differential scanning calorimetry to study the temperatures and kinetics of nickel silicide formation from nickel/amorphous silicon multilayer films. When the layer thickness ratio of a multilayer film is 1:1, Ni2 Si is the only phase to form. The activation energy for this reaction is 1.5 eV and the interdiffusivity pre-exponential is found to be 6 cm−2s−1. These values are in excellent agreement with values obtained using different techniques. The temperature at which Ni2 Si formation is observed a function of layer thickness, with the thinner layers reacting at lower temperatures. This layer thickness dependence can be explained by the lower reaction times for thinner layers. Upon mechanical impact, films composed of very thin layers (〈125 A(ring)) reacted explosively at room temperature to form Ni2 Si. Explosive silicidation is presumed to occur when the rate of heat generation at the many reacting interfaces exceeds the rate of heat dissipation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99644
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  • 7
    Electronic Resource
    Electronic Resource
    Surface stress effects on the critical film thickness for epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1197-1198 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis of the critical thickness dependence on misfit for epitaxy is presented including effects due to surface stresses. It is shown that these surface stress effects, which have not been included in previous theories of epitaxy, can have a major influence on the critical thickness, especially for relatively large misfits. A simple model incorporating effects due to compressive surface stresses is given which, compared to previous theories, predicts significantly larger (smaller) critical thicknesses when the stress-free lattice parameter of the film is greater (less) than the lattice parameter of the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101654
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  • 8
    Electronic Resource
    Electronic Resource
    NiSi2 precipitation in nickel-implanted silicon films (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1106-1108 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the formation of nickel silicide in nickel-implanted amorphous silicon thin films. We have found that during annealing, precipitates of NiSi2 form in the interior of the film. This is in contrast with results for interfacial reactions between nickel films and silicon, where the first phases to appear are Ni2Si and NiSi on amorphous silicon, and Ni2Si on crystalline silicon. We suggest that these results reflect differences in surface energies and their effects on silicide nucleation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99003
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  • 9
    Electronic Resource
    Electronic Resource
    Anisotropy in magnetic and mechanical properties in textured Hiperco® FeCoV alloys (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6508-6510 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hiperco® FeCoV alloys are soft magnetic materials suitable for applications at high temperatures and under high stresses. We have studied the evolution of the rolling texture and its effects on the mechanical and magnetic properties after annealing the Hiperco® sheets at high temperatures. X-ray pole-figure measurements reveal that the main texture of the as-rolled HA50HS and HA50 sheets is {001}〈11¯0〉. This rolling texture causes the mechanical and magnetic properties to exhibit a uniaxial anisotropy, which is reduced by annealing. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372753
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  • 10
    Electronic Resource
    Electronic Resource
    Simple model for interface stresses with application to misfit dislocation generation in epitaxial thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1227-1234 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple model for the interfacial free energy of a semicoherent interface is used to develop expressions for interface stresses, which are surface thermodynamic quantities associated with solid–solid interfaces. An analysis of the thermodynamics of thin film epitaxy is presented that incorporates the effects of free surface and interface stresses, and an expression for the critical thickness for thin film epitaxy is obtained. Based on this analysis, the concept of effective pressures exerted by the thin film free surface and film–substrate interface is introduced. If it is assumed that misfit dislocations are generated at the film–substrate interface as a result of glide of threading dislocations, the thermodynamics and kinetics of stress relaxation can be discussed in terms of a balance of Peach–Koehler forces acting on the threading dislocations owing to the surface and interface pressures as well as to the coherency stress. An example is given that shows that, if the film has a relatively large surface pressure that opposes lattice matching, the dependence of the coherency strain on film thickness can be very different from that obtained from conventional analyses which ignore the effect of the free surface; specifically, the largest equilibrium coherency strain of the same sign as the misfit can be much smaller than the total misfit, and an "anomalous" coherency strain of sign opposite that of the misfit can be thermodynamically favorable at small film thicknesses. The analysis used to obtain the critical thickness for thin film epitaxy is extended to give an expression for the critical thickness for misfit dislocation generation at the interface between a substrate and a superlattice thin film. It is shown that this critical thickness depends on a superlattice pressure associated with the interlayer interface stress in addition to the free surface and film–substrate interface pressures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372001
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