ISSN:
0392-6737
Keywords:
III-V semiconductors
;
Electron states in low-dimensional structures (including, quantum wells, superlattices, layer structures, and intercalation compounds)
;
Excitons and related phenomena (including electron-hole drops)
;
Brillouin and Rayleigh scattering
;
Conference proceedings
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Summary A detailed study of the relative role played by localized and/or propagating intermediate excitonic states in, resonant Rayleigh scattering (RRS) is presented for a large set of GaAs quantum well (QW) and bulk structures. We show that the two kinds of states contribute to RRS through different mechanisms. We concluded that RRS occurs via localized states in QW heterostructures, very likely due to localization by the interface roughness, while bulk, crystals turn out to be better candidates for RRS via propagating states.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02457231
Permalink
