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  • 1
    Electronic Resource
    Electronic Resource
    Planar native-oxide buried-mesa AlxGa1−xAs-In0.5(AlyGa1−y)0.5P- In0.5(AlzGa1−z)0.5P visible-spectrum laser diodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2521-2525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating the continuous (cw) room-temperature (23 °C) operation of planar index-guided "buried-mesa'' AlxGa1−xAs-In0.5(AlyGa1−y)0.5P- In0.5Ga0.5P heterostructure visible-spectrum laser diodes. The planar "mesa'' structure is formed by "wet'' oxidation (H2O vapor+N2 carrier gas, 550 °C) of the AlxGa1−xAs on the composite AlxGa1−xAs-In0.5(AlyGa1−y)0.5P upper confining layer (outside of the active stripes). The oxidation process results in a ∼0.5-μm-thick native oxide located (in depth) within ∼3000 A(ring) of the active layer in the region outside of the laser stripes themselves. The oxide possesses excellent current-confinement properties and a low refractive index (n≈1.60), resulting in relatively low-threshold laser operation for narrow-stripe devices. In addition, these devices exhibit transverse-mode confinement and small beam astigmatism because of the refractive index step provided by the deep native oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351067
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Long wavelength (λ∼1.5 μm) native-oxide-defined InAlAs-InP-InGaAsP quantum well heterostructure laser diodes (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2706-2708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Native oxidation ("wet'' oxidation via H2O vapor+N2) of InAlAs is employed to fabricate long wavelength (λ∼1.5 μm) InAlAs-InP-InGaAsP quantum well heterostructure laser diodes. Data are presented on gain-guided native-oxide-defined stripe-geometry lasers (40 μm×500 μm) with threshold currents of 200 mA (1 kA/cm2) emitting with multiple longitudinal modes centered at λ∼1.5 μm. The threshold currents, approximated as Ith=I0 exp(T/T0), exhibit a characteristic temperature of T0∼49 K and an operating temperature as high as T=70 °C. Maximum continuous output powers of 140 mW/facet (uncoated facets) and a differential quantum efficiency of 38% are achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356200
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Low-threshold disorder-defined native-oxide delineated buried-heterostructure AlxGa1−xAs-GaAs quantum well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1765-1767 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Impurity-induced layer disordering (IILD) along with oxidation (native oxide) of high-gap AlxGa1−xAs confining layers is employed to fabricate low-threshold stripe-geometry buried-heterostructure AlxGa1−xAs-GaAs quantum well heterostructure (QWH) lasers. Silicon IILD is used to intermix the quantum well and waveguide regions with the surrounding confining layers (beyond the laser stripe) to provide optical and current confinement in the QW region of the stripe. The high-gap AlxGa1−xAs upper confining layer is oxidized in a self-aligned configuration defined by the contact stripe and reduces IILD leakage currents at the crystal surface and diffused shunt junctions. AlxGa1−xAs-GaAs QWH lasers fabricated by this method have continuous 300 K threshold currents as low as 5 mA and powers (approximately-greater-than) 3l mW/facet for ∼ 3-μm-wide active regions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105084
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Coupled-stripe in-phase operation of planar native-oxide index-guided AlyGa1−yAs-GaAs-InxGa1−xAs quantum-well heterostructure laser arrays (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 71-73 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-performance, coupled-stripe, planar, index-guided AlyGa1−yAs-GaAs-InxGa1−xAs quantum-well heterostructure (QWH) laser arrays are fabricated by the formation of a relatively thick, current-blocking, native oxide from the high-gap AlyGa1−yAs upper confining layer between active stripes. Precise control of the thickness of the native oxide layer between emitters provides a means of varying the index step between stripes, and permits tailoring of the optical profile to produce in-phase operation. The 10-stripe coupled QWH laser arrays (∼3-μm-wide stripes on 4 μm centers) exhibit near-diffraction-limited, single-lobed, far-field patterns with low continuous (cw) thresholds (∼45 mA) and cw output powers (total external differential quantum efficiency (approximately-greater-than)50%) of over 100 mW per uncoated facet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107378
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  • 5
    Electronic Resource
    Electronic Resource
    Planar single-facet teardrop-shaped AlxGa1−xAs-GaAs quantum well heterostructure laser (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1818-1820 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating the laser operation of an AlxGa1−xAs-GaAs quantum well heterostructure (QWH) crystal patterned into a smoothly curved folded resonator, a "teardrop''-shaped resonator, with a single output facet. A deep AlxGa1−xAs native oxide formed entirely through the top confining layer is utilized to produce a large effective index step for lateral optical confinement. The teardrop-shaped laser operates primarily in a TM (transverse magnetic) longitudinal mode polarized with a TM/TE (transverse electric) power ratio of 7:1. Continuous wave 300 K threshold currents as low as ∼127 mA, external differential quantum efficiencies of η∼15%, and total output power in excess of 75 mW (uncoated facet) are achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110673
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    High-performance planar native-oxide buried-mesa index-guided AlGaAs-GaAs quantum well heterostructure lasers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 321-323 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-performance planar "buried-mesa'' index-guided AlGaAs-GaAs quantum well heterostructure (QWH) lasers have been fabricated by oxidation (H2O vapor+N2 carrier gas, 425–525 °C) of a significant thickness of the high composition AlxGa1−xAs upper confining layer (outside the active stripe). The oxide provides excellent current confinement for low-threshold laser operation and a low refractive index (n∼1.6) for transverse optical confinement and index guiding. Laser diodes with ∼4 μm-wide active regions exhibit 300 K continuous (cw) laser thresholds of 8 mA, with single longitudinal mode operation to 23 mW/facet, and maximum output powers of 45 mW/facet (uncoated). Devices fabricated on a lower confinement AlxGa1−xAs-GaAs QWH crystal (x(approximately-less-than)0.6 instead of x(approximately-greater-than)0.8) with ∼4 μm-wide active stripes exhibit 300 K cw thresholds of 9 mA and total external differential quantum efficiencies of 66%. Peak output powers (approximately-greater-than)80 mW/facet (uncoated) with linear L-I characteristics over the entire operating range are observed. In limited "lifetest'' these laser diodes have been operated (approximately-greater-than)500 h without significant degradation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107924
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Planar native-oxide index-guided AlxGa1−xAs-GaAs quantum well heterostructure lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1755-1757 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new form of planar index-guided laser diode is demonstrated with a relatively thick (∼0.4 μm) native oxide employed to define the lateral optical waveguide (transverse to the laser stripe). Oxidation of high-gap AlxGa1−xAs in a "wet'' ambient results in the transformation of most of the upper confining layer to a lower-index current-blocking native oxide outside of the active stripe. Planar quantum well heterostructure (QWH) AlxGa1−xAs-GaAs laser diodes fabricated by this process exhibit both optical and current confinement. Continuous 300 K threshold currents as low as 10 mA (uncoated facets) and kink-free single-longitudinal-mode operation are demonstrated for ∼2-μm-wide active region devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106240
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Native-oxide defined In0.5(AlxGa1−x)0.5P quantum well heterostructure window lasers (660 nm) (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1688-1690 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating In0.5(AlxGa1−x)0.5P quantum well heterostructure lasers with extended current-blocking windows (∼75 μm/window) that exhibit significant improvements in output power (∼2×) compared to lasers with no windows. The windows and active stripes are defined by the formation of a thin (∼1000 A(ring), patterned) native oxide via H2O vapor oxidation (550 °C) of the high-gap In0.5(AlxGa1−x)0.5P upper confining layer. Devices operating at ∼660 nm with a 40 μm wide emitting aperture (∼500 μm cavity) and ∼75 μm windows (total window length ∼150 μm) exhibit 300 K continuous output powers (approximately-greater-than)130 mW/facet (uncoated) and pulsed output powers (approximately-greater-than)575 mW/facet (uncoated). Improvements in output power result from decreased heating at the facets and defocusing of the optical wave in the unpumped window regions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108452
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Dependence on doping type (p/n) of the water vapor oxidation of high-gap AlxGa1−xAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3165-3167 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation (H2O vapor+N2 carrier gas, 425–525 °C) of high-gap AlxGa1−xAs of different doping types (p and n) is characterized by oxide depth measurements utilizing scanning electron microscopy. The conductivity type is found to affect significantly the oxidation rate, with p-type samples oxidizing more rapidly than n-type samples. Classical oxidation theory is employed to explain these phenomena which are related to the position of the Fermi level in the samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106730
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Planar native-oxide AlxGa1−xAs-GaAs quantum well heterostructure ring laser diodes (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1582-1584 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Native-oxide planar AlxGa1−xAs-GaAs quantum well heterostructure ring laser diodes (25-μm- wide annulus, 250-μm inside diameter, 300-μm outside diameter) are demonstrated. The curved cavities (full-ring, half-ring, and quarter-ring) are defined by native oxidation (H2O vapor+N2 carrier gas, 450 °C) of the entire upper confining layer inside and outside of the annulus. The native oxide provides current confinement and a sufficiently large lateral index step, and thus photon confinement, to support laser oscillation along the ring. Half-ring laser diodes fabricated in a self-aligned geometry exhibit continuous wave (cw) 300-K thresholds as low as ∼105 mA (∼500-μm circular cavity length), high total external differential quantum efficiencies (∼49%), and cw output powers of (approximately-greater-than)40 mW.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107258
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    Paper (German National Licenses)
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