Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Limitation to Shockley–Read–Hall model due to direct photoionization of the defect states (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2409-2415 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Restrictions on the standard Shockley–Read–Hall (SRH) model in the recombination processes due to direct photoionization of the trapping centers have been theoretically studied. We find that, for photon energies even slightly in excess of the energy gap (i.e., (h-dash-bar)ω≥Eg+0.01 eV) photoionization via defect states may normally be neglected in comparison with interband photogeneration, even in indirect semiconductors (e.g., n-type silicon doped with gold). For photon energies below Eg, the recombination expressions for SRH are found to be simply replaced by similar expressions with suitably defined effective values n@B|1 and p*1, which incorporate the photoionization of the trapping centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342810
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Behavior of downstream plasmas generated in a microwave plasma chemical-vapor deposition reactor (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4398-4403 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of electron-cyclotron resonant (ECR) and non-ECR H2 plasmas generated in a microwave plasma chemical-vapor deposition reactor have been studied as a function of magnetic field strength and absorbed microwave power. Plasma diagnostics were performed with a planar electrostatic probe, microwave power measurements, and visual inspection. The probe measurements were concerned with the plasma impingent on a sample table placed downstream from the active core of the plasma. ECR plasmas were found to be more efficient, stable, uniform, and dense than plasmas not generated by ECR. All properties of the ECR plasmas measured by the downstream probe showed a gentle monotonic increase with the magnetic field strength. This was attributed to a reduction in the spacing between the probe and the resonant zone. In the ECR plasmas the average electron temperature was 3 eV and the average density was 1016 m−3. The degree of ionization was on the order of 5×10−4.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342467
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Amorphous silicon–tellurium alloys (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2036-2040 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous silicon–tellurium alloy thin films were fabricated by coevaporation over the composition range of 0–82 at. % Te. The electronic and optical properties of these films were systematically investigated over this same range of composition. The optical gap of these films was found to decrease monotonically with increasing Te content. Conduction near room temperature was due to extended state conduction, while variable range hopping dominated below 250 K. The incorporation of Te in concentrations of less than 1 at. % was found to produce an increase in the density of localized states at the Fermi level and a decrease in the activation energy. This was attributed to the Te being incorporated as a substitutional, fourfold coordinated, double donor in a-Si. At approximately 60 at. % Te, a decrease in the density of localized states at the Fermi level, and an increase in the activation energy and photoresponse was indicated. This was attributed to the possible formation of a less defective a-Si:Te compound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337205
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electron-cyclotron-resonant microwave plasma system for thin-film deposition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 493-496 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new microwave plasma method for the fabrication of solid films is presented. Microwave power is efficiently transferred to the plasma, resulting in minimal power requirements. Uniform silicon films have been fabricated with a wide range of optical and electronic properties, at high deposition rates and low substrate temperatures. In a magnetically well-confined plasma operating in the vicinity of electron-cyclotron-resonance (ECR) conditions, film properties are strongly dependent upon the intensity of the externally applied dc magnetic field. The departure of the plasma chemistry from that associated with conventional rf systems is manifested in the observation of some opposite trends in the growth of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138915
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Parallel pseudorandom number generation in GaAs cellular automata for high speed circuit testing (1995)
    Springer
    Journal of electronic testing 6 (1995), S. 325-330 
    Details
    ISSN: 1573-0727
    Keywords: testing high-speed circuits ; pseudorandom number generation ; GaAs ; cellular automata
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract To facilitate test vector generation for high-speed circuits, we present the design and circuit simulation of parallel pseudorandom number generators in GaAs technology. These PRNGs are based on hybrid cellular automata (CA) in which mixtures of local rules are employed in one dimensional arrays, with minimal delay due to having only local wiring between neighboring cells. HSPICE simulations of these circuits demonstrate that they operate at a clock frequency above 1 GHz. Delay simulations indicate that GaAs PRNGs based upon linear feedback shift registers, in contrast with hybrid CAs, exhibit a degradation in clock frequency due to the effects of global interconnects, and that this degradation increases with the register length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00996440
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Learning capacitive weights in analog CMOS neural networks (1994)
    Springer
    The journal of VLSI signal processing systems for signal, image, and video technology 8 (1994), S. 209-225 
    Details
    ISSN: 1573-109X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract Implementations of artificial neural networks as analog VLSI circuits differ in their method of synaptic weight storage (digital weights, analog EEPROMs, or capacitive weights) and in whether learning is performed locally at the synapses or off-chip. In this paper, we explain the principles of analog networks with in situ or local synaptic learning of capacitive weights, with test results of CMOS implementations from our laboratory. Synapses for both simple Hebbian and mean field networks are investigated. Synaptic weights may be refreshed by periodic rehearsal on the training data, which compensates for temperature drift or other nonstationarity. Compact high-performance layouts have been obtained in which learning adjusts for component variability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02106447
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Analog VLSI Circuits for Competitive Learning Networks (1998)
    Springer
    Analog integrated circuits and signal processing 15 (1998), S. 291-314 
    Details
    ISSN: 1573-1979
    Keywords: Artificial Neural Networks ; Vector Quantization ; Competitive Learning ; Analog VLSI Circuits
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract An investigation is made concerning implementations of competitive learning algorithms in analog VLSI circuits and systems. Analog and low power digital circuits for competitive learning are currently important for their applications in computationally-efficient speech and image compression by vector quantization, as required for example in portable multi-media terminals. A summary of competitive learning models is presented to indicate the type of VLSI computations required, and the effects of weight quantization are discussed. Analog circuit representations of computational primitives for learning and evaluation of distortion metrics are discussed. The present state of VLSI implementations of hard and soft competitive learning algorithms are described, as well as those for topological feature maps. Tolerance of learning algorithms to observed analog circuit properties is reported. New results are also presented from simulations of frequency-sensitive and soft competitive learning concerning sensitivity of these algorithms to precision in VLSI learning computations. Applications of these learning algorithms to unsupervised feature extraction and to vector quantization of speech and images are also described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008222414574
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Deterministic one-dimensional cellular automata (1989)
    Springer
    Journal of statistical physics 56 (1989), S. 99-112 
    Details
    ISSN: 1572-9613
    Keywords: Automata theory ; cellular automata ; group theory ; meshconnected computers ; VLSI ; parallel processing ; discrete dynamical systems
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A formal treatment of some of the properties of deterministic, rule 150, elementary one-dimensional cellular automata (CA) with null boundary conditions is presented. The general form of the characteristic polynomial of the CA global rule transition matrix is obtained. Mathematical relationships between the CA register lengths and the order of the corresponding group or semigroup structures are derived.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01044234
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...