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  • 1
    Electronic Resource
    Electronic Resource
    Electromechanical properties of Pb(Mg1/3Nb2/3)O3–7%PbTiO3 thin films made by pulsed laser deposition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6200-6202 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film capacitors of Au/Pb(Mg1/3Nb2/3)O3–7%PbTiO3 [PMN–(0.07)PT]/(La1/2Sr1/2)CoO3 were made by pulsed laser deposition on single crystal {001} MgO substrates. The PMN–(0.07)PT dielectric was perovskite dominated, and demonstrated functional behavior typical of relaxors. Electrostrictive behavior was observed at fields up to 200 kV cm−1, however, the maximum strain was disappointingly low at only ∼0.14%. The macroscopic electromechanical d33 and Q33 coefficients were determined using piezo-response atomic force microscopy. At 100 kV cm−1 the macroscopic Q33 was found to be (2.6±0.2)×10−2 C−2 m4. The crystallographic electrostrictive coefficient was determined using in-situ x-ray diffraction and at the same field found to be significantly higher: (4.9±0.2)×10−2 C−2 m4. Since these electrostrictive coefficients are of the same order of magnitude as found in single crystal experiments (2.5–3.8×10−2 C−2 m4), it appears that the low out-of-plane strain is simply the result of poor polarizability in the thin films. An effective Q13 component of the electrostrictive tensor was also determined, and found to be ∼−0.32 ×10−2 C−2 m4. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1465116
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of thermal expansion mismatch on the dielectric peak temperature of thin film relaxors (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2295-2301 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strongly oriented thin film capacitors of Pb(Mg1/3Nb2/3)O3 were made by pulsed laser deposition and found to show a decreased temperature of the dielectric maximum (Tm) relative to bulk. The in-plane strain was measured and found to be compressive, a feature that is normally associated with increased Curie temperatures in conventional ferroelectrics. Other features, such as a more pronounced frequency dependence of Tm in thin films than in bulk, were also noted. An attempt to rationalize these differences by consideration of thermal expansion mismatch between substrate and film is presented. The shifts in Tm are modeled using a semiempirical Landau–Ginzburg–Devonshire model, in which the first coefficient of the thermodynamic potential has been modified to have a quadratic, rather than linear, temperature dependence. The predictions of the model are compared with experimental results from this work and other reports on relaxor thin films extracted from the literature. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429761
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  • 3
    Electronic Resource
    Electronic Resource
    Transport properties of NdNiO3 thin films made by pulsed-laser deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 606-608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed-laser deposition was used to make thin films of NdNiO3 on a variety of substrates. The films were found to be single phase perovskite in all cases. However, the transport behavior varied strongly as a function of the substrate used: the films were semiconducting on MgO, but showed a metal-semiconductor phase transition on SrTiO3 and NdGaO3. The best electrical-switching properties corresponded to films grown on NdGaO3, with the resistivity changing abruptly by more than two orders of magnitude at TMI∼185 K. Very thin films (∼35 nm) were also grown on NdGaO3 substrates to investigate the epitaxial strain effect on the transition. It appears that biaxial tensile strain stabilizes the high temperature metallic phase, thus lowering TMI. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371912
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of oxygen content on dielectric and electromechanical properties of Pb(Mg1/3Nb2/3)O3 thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3035-3037 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed laser deposition was used to grow Pb(Mg1/3Nb2/3)O3 (PMN) thin film planar capacitor structures. X-ray diffraction and plan-view transmission electron microscopy were used to verify PMN crystallography. The dc leakage current and ac capacitance and dielectric loss were measured as a function of temperature and frequency. Finally, crystallographic strain as a function of applied dc field was monitored in situ by x-ray diffraction. The electromechanical strain response was found to depend on the deposition conditions for each capacitor. Tensile strains of ∼0.2% and compressive strains of ∼0.35%, both parallel to the applied field, were measured for capacitors of different oxygen contents and thicknesses. Tensile strains achieved are higher than previously reported for PMN thin films or polycrystalline ceramics. We propose that the compressive strains are not an intrinsic property of the PMN. Instead they are induced by the combined effect of joule heating of the capacitor structure, caused by leakage currents, and thermal expansion mismatch between the substrate and films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124056
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  • 5
    Electronic Resource
    Electronic Resource
    Relaxor features in ferroelectric superlattices: A Maxwell–Wagner approach (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3078-3080 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Maxwell–Wagner series capacitor model is proposed to explain anomalous dielectric properties of ferroelectric superlattices. The results of the model show that a superlattice consisting of normal ferroelectric layers separated by low-resistivity interfacial regions can account for most experimental results reported to date, namely: dielectric enhancement for certain stacking periodicities, giant permittivities, and temperature migration of dielectric maxima as a function of frequency. The predictions of the model are discussed and compared to our own experimental results from thin film superlattice capacitors made by pulsed-laser deposition. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324729
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  • 6
    Electronic Resource
    Electronic Resource
    Thin film ferroelectrics for capacitor applications (1998)
    Springer
    Journal of materials science 9 (1998), S. 199-205 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Pulsed laser deposition (PLD) has been used to fabricate simple thin film capacitor structures with a variety of ferroelectric materials. Thin film capacitors using the conventional ferroelectric material BaxSr1-xTiO3(BSTO) have been made across the entire compositional series. Electrical characterization shows that in thin film form these ferroelectrics display Curie point behaviour which is largely independent of composition. This contrasts sharply with bulk behaviour. The thin film fabrication and characterization of relaxor ferroelectric ceramics, such as Pb(Mg1/3Nb2/3)O3 (PMN) and Pb(Zn1/3Nb2/3)O3-BaTiO3(PZN-BT), is also reported. © 1998 Chapman & Hall
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008826124316
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  • 7
    Electronic Resource
    Electronic Resource
    Investigation into the growth and electromechanical properties of Pb(Mg1/3Nb2/3)O3 thin films (2000)
    Springer
    Journal of materials science 11 (2000), S. 543-547 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Pulsed laser deposition (PLD) has been used to fabricate relaxor thin films and thin film capacitors based on the Pb(Mg1/3Nb2/3)O3 system. Best capacitor structures show dielectric constants (ɛr) of ∼1000 and losses (tan δ) ∼0.02 at 1 kHz at 300 K. Electromechanical investigations show that tensile longitudinal strains of up to 0.2% can be achieved in these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1026570229013
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