ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Growing good quality SiC epitaxial layers at temperature lower than 1400°C is achallenging problem which could help reducing the costs, increasing the safety of the process oreven give new perspectives. Toward this aim, liquid based growth techniques have been used. TheSi-based melts should be carefully chosen considering several criteria. Furthermore, theimplementation of a liquid phase for growing SiC epilayer can be performed in various manners(dipping or VLS mechanism) so that one has to choose the more appropriate technique. Thediscussion is illustrated with several results showing that the growth of SiC from a liquid phase atlow temperature can address various important technological points such as experimental safety, ptypedoping, on-axis or selective epitaxy. The recent demonstration of single-domain 3C-SiCheteroepitaxial layers on hexagonal SiC substrates confirms that liquid based growth has stillunexpected qualities
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.41.pdf
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