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  • 1
    Electronic Resource
    Electronic Resource
    Role of defects on electron transport through semiconductor barriers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 315-318 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the effect of electron irradiation on the current-voltage characteristics of nonintentionally doped GaAlAs barriers imbedded in n-type doped GaAs. It is found that below typically 100 K where the Fowler–Nordheim tunneling applies, tunneling switches from the lowest (Γ) band to a higher (X) one after a fluence of few 1016 electron cm−2. At high temperature a defect assisted process involving tunneling into defect sites followed by the thermal ionization of electrons into the barrier conduction band, dominates. This process is also modified by the irradiation, the native defects being replaced by the electron induced defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357146
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  • 2
    Electronic Resource
    Electronic Resource
    Irradiation effect on electron transport through GaAlAs barriers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1006-1008 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of electron irradiation on the electronic transport through GaAlAs barriers has been studied. A drastic change in the current voltage characteristics has been observed. At low-temperature scattering by the introduced defects induces tunneling via X band states. At high temperature the transport is dominated by electric field enhanced electron emission from defect levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110952
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  • 3
    Electronic Resource
    Electronic Resource
    Non-ohmic conduction in doped polyacetylene at low temperatures (1986)
    Springer
    The European physical journal 64 (1986), S. 19-23 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The electrical conductivity of a iodine-doped polyacetylene is measured as a function of the electric field ℰ at temperatures between 4K and 0.3K. We find that after an initial non-linear behavior σ increases linearly with ℰ in agreement with a theoretical description based on variable-range hopping conduction. The non-linear rise at low fields depends on the iodine concentration. In heavily doped samples the increase is small and varies as ℰ2, whereas in less conductive samples a large change is observed at 0.3K which varies approximately as log ℰ for fields from 1 V/m to 150 V/m.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01313684
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    Paper (German National Licenses)
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