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  • 1
    Electronic Resource
    Electronic Resource
    Characteristics of pseudomorphic AlGaAs/InxGa1−xAs (0≤x≤0.25) doped-channel field-effect transistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2494-2498 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pseudomorphic properties of doped-channel field-effect transistors have been thoroughly investigated based on AlGaAs/InxGa1−xAs (0≤x≤0.25) heterostructures with different In contents. Through various analytical schemes and device characterization, we observed that by introducing a 150 A(ring) strained In0.15Ga0.85As channel we can enhance device performance; however, this strained channel is not stable after high-temperature heat treatment. By further increasing the In content up to x=0.25, the device performance started to degrade, which is associated with strain relaxation in this highly strained channel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357608
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Enhanced annealing kinetics in ion-implanted InxAl1−xAs studied by x-ray diffractometry (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2267-2269 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a rapid thermal annealing (RTA) enhancement of the structural coherence of Si-implanted InxAl1−xAs (x≈0.54) layers on (100)InP. Under these annealing conditions (750 °C for 30 s), the enhancement occurs only in implanted samples and is characterized by the appearance of pendellösung fringes in double-crystal x-ray diffraction. Measurements of the parallel (ε(parallel)) and perpendicular (ε⊥) lattice mismatch show a slight relaxation in ε⊥ during RTA without significant generation of dislocations (ε(parallel)=0). The results suggest an electronic mechanism for the increased efficiency of RTA in implanted samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104895
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Carbon + argon co-implantation for GaAs p-channel metal-semiconductor field-effect transistors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1092-1094 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon (C), based on its high carrier density and low diffusivity, has been applied extensively in GaAs devices, where p-active layers are required. In this study, we used C as an implant source to form p-type active layers, rather than using the conventional epitaxial approach. The dopant activation increased dramatically if an additional argon (Ar) implantation was used. p-channel GaAs metal-semiconductor field-effect transistors were fabricated with this C plus Ar co-implantation technique and demonstrated a promising improvement on device performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109790
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  • 4
    Electronic Resource
    Electronic Resource
    Modulation-doped In0.48Al0.52P/In0.2Ga0.8As field-effect transistors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1105-1107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In0.48Al0.52P/In0.2Ga0.8As pseudomorphic modulation-doped field-effect transistors (MODFETs) were realized for the first time by gas-source molecular beam epitaxy on GaAs substrates. Extrinsic transconductances of 173 and 283 mS/mm at 300 and 77 K, respectively, were measured for MODFETs with a 1 μm long and 75 μm wide gate. The devices showed very good pinch-off characteristics, and the output conductance was only 1.3 mS/mm. Extremely high Schottky barrier height (0.92 eV) and low gate leakage current (Irev〈250 nA at VGS=−5 V) were achieved. The gate breakdown voltage was −17 V. No I-V collapse was observed at 77 K. Microwave measurements showed that the current gain cutoff frequency fT of the devices was 11.5 GHz and the maximum frequency of oscillation fmax, was 26 GHz. These results demonstrate the promising potential of pseudomorphic In0.48Al0.52P/InGaAs MODFETs as high frequency and high power devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108756
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  • 5
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy regrowth and device performance of GaAs-based pseudomorphic high electron mobility transistors using a thin indium passivation layer (2000)
    Springer
    Journal of materials science 11 (2000), S. 483-487 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Using the technique of molecular beam epitaxy, an indium passivation layer as thin as several tens of Å was implemented to protect underlying III-V epilayers from carbon and oxygen contamination. After the subsequent desorption of the passivation layer, GaAs-based pseudomorphic high electron mobility transistors (PHEMTs) were regrown. Negligible residual carriers were detected at the interface between the regrown PHEMTs and the underlying layer, resulting in a superior performance. The regrown PHEMTs with a 1 × 100 μm2 gate demonstrated an extrinsic transconductance g me as high as 330 mS mm-1. Microwave measurements showed that the current gain cut-off frequency f t was 26.5 GHz and the maximum oscillation frequency f max was up to 48 GHz. A small-signal equivalent circuit model of the regrown PHEMTs was also evaluated. © 2000 Kluwer Academic Publishers
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008964417604
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    Paper (German National Licenses)
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