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  • 1
    Electronic Resource
    Electronic Resource
    Cyclotron resonance measurements of the high electron mobility transistor (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 57-59 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoconductivity cyclotron resonance measurement is used to determine the effective masses of the high electron mobility transistor. The experimental data show that the effective mass is a function of the gate voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103184
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    The characterization of high electron mobility transistors using Shubnikov–de Haas oscillations and geometrical magnetoresistance measurements (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 928-936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shubnikov–de Haas oscillations and geometrical magnetoresistance measurements are used to determine the two most important parameters, channel concentration and mobility, respectively, for high electron mobility transistors. To deduce useful data from measurements, the theory of the Shubnikov–de Haas oscillation for the two-dimensional electrons is derived and discussed in detail. The experimental data for the channel concentration as a function of gate voltage is used to check the accuracy of the charge-control law. We also derive a simple formula of the geometrical magnetoresistance to calculate the mobility for any aspect ratio. The concentration and mobility deduced from the Shubnikov–de Haas and geometrical magnetoresistance measurements give us insight on the nature and properties of the devices. The experimental data shows that the impurity scattering is the dominant mechanism for the low channel concentration. The maximum transconductance occurs at a compromise between the charge-control ability of the gate voltage and the channel mobility. Near the cutoff region the decrease of the conductivity is due to the decrease of both the channel concentration and the mobility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343522
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    Paper (German National Licenses)
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