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  • 1
    Electronic Resource
    Electronic Resource
    The effects of oxygen dose on the formation of buried oxide silicon-on-insulator (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2308-2312 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the oxygen dose on the microstructure and the dielectric properties of the buried oxide in oxygen implanted silicon-on-insulator (SOI) structures have been studied. Cross-sectional transmission electron microscopy analyses show that the density of oxygen precipitates at the silicon/buried-oxide interface increases with a decreasing oxygen dose when identical annealing processes are employed. Annealing studies reveal that 1275 °C anneals annihilate the oxygen precipitates. A longer annealing time is required to achieve an oxygen-precipitate-free silicon layer in an SOI substrate implanted with a lower oxygen dose. The inverse relationship between oxygen content in the silicon film and oxygen dose is attributed to the redistribution of oxygen during implantation. In the oxygen dose range studied, the thickness and the breakdown voltage of the buried oxide layer increase with increasing oxygen dose. Higher postimplant annealing temperature improves the isolation properties of the buried oxide layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339490
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy of gold-silicon interactions on the backside of silicon wafers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1473-1477 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Au-Si interactions on the backside of 〈111〉 silicon wafers have been studied over the temperature range of 275–400 °C by transmission electron microscopy. The Au films annealed at temperatures below the Au-Si eutectic temperature (363 °C) all have similar structure—columnar Au grains of small size (∼450 A(ring)). An orthorhombic gold silicide, Au3Si, forms at the Au/Si interface below the eutectic temperature due to the migration of Au into the silicon substrate. The Au3Si grains are of much larger size (∼2000 A(ring)) than Au and contain twins. Annealing at 400 °C, which is above the eutectic temperature, results in a completely different structure. It consists of numerous small Si islands protruded and dispersed throughout a continuous, large grain (〉2.8 μm), polycrystalline gold film. Gold silicide was not observed at 400 °C. Many Au grains are found to grow epitaxially on the silicon substrate. The silicon islands are also found to grow epitaxially on silicon substrate. The structure after 400 °C annealing is interpreted as the result of the eutectic reaction between the substrate Si and the overlaying Au film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339928
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  • 3
    Electronic Resource
    Electronic Resource
    Microstructural characterization of nitrogen-implanted silicon-on-insulator (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 166-174 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of implant dose and postimplant annealing treatment on the microstructure of nitrogen-implanted silicon-on-insulator were studied by cross-sectional transmission electron microscopy techniques. In the lower dose case (0.75×1018/cm2) an amorphous silicon layer forms after implantation. Annealing at 1200 °C or higher results in a buried polycrystalline α-Si3N4 layer containing many randomly oriented silicon particles. Higher dose implantation results in an amorphous silicon-nitride layer. A porous layer also forms in the middle of the amorphous layer if the implant dose is 1.2×1018/cm2 or higher. The crystallization of the amorphous layer in the higher dose cases is shown to happen in two steps. In the first step nucleation and growth of α-Si3N4 grains occur in the amorphous nitride region to form a spherulitic polycrystalline structure. The second step is the cellular growth of the spherulitic nitride grains into the crystalline silicon regions. Silicon particles are trapped at the cell walls as the cellular reaction advances. These particles are conglomerated and sphereodized but retain the same orientation as the substrate silicon at higher temperatures. The quality of the top silicon film is excellent after annealing at 1200 °C or higher, irrespective of the implant dose.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338850
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  • 4
    Electronic Resource
    Electronic Resource
    Zinc doping in gallium antimonide grown by low-pressure metal-organic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 56-59 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zn-doped GaSb epilayers grown on GaAs and GaSb substrates by low-pressure metal-organic chemical vapor deposition were studied. Triethylgallium and trimethylantimony were used as Ga and Sb sources, respectively. The carrier concentrations of p-type GaSb epilayers were affected by V/III ratio and growth temperature. Diethylzinc(DEZn) was used as the p-type dopant. The relationship between carrier concentration P and mole fraction [DEZn] is P=K[DEZn]2.3. Photoluminescence for different carrier concentration was compared. There exist two different regions for the carrier concentration versus growth temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353829
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  • 5
    Electronic Resource
    Electronic Resource
    Histopathology of experimental Streptococcus sp. infection in tilapia, Oroochromis niloticus (L.), and channel catfish, Ictafurus punctatus (Ratinesque) (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of fish diseases 19 (1996), S. 0 
    Details
    ISSN: 1365-2761
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Nile tilapia, Oreochromis niloticus (L.), and channel catfish, Ictalurus punctatus (Rafinesque), were experimentally infected by immersion with three isolates (Lake, DL8O5 and MS91452) of Streptococcus sp. from diseased fish. To enhance infection, the lateral body surface of each fish was scraped prior to bacterial exposure. The Lake and DL8O5 isolates caused exophthalmia, ocular opacity and ocular haemorrhage in some tilapia. Histopathology of these fish revealed; meningitis; polyserositis of heart, liver, spleen, ovary and kidney; splenitis; ovaritis; and myocarditis. Isolate MS91452 induced only mild granulomas in spleen, kidney and ovary of tilapia. The Lake and DL8O5 isolates induced endophthalitis, Channel catfish infected with the Lake and DL805 isolates developed similar eye lesions to tilapia. Histologic lesions caused by all three isolates in channel catfish consisted of meningoencephalitis, mild myocarditis, splenitis and ovaritis, but these lesions were not as severe as in Nile tilapia.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2761.1996.tb00130.x
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  • 6
    Electronic Resource
    Electronic Resource
    Defect structure in EuS single crystals grown from the melt (1979)
    Springer
    Applied physics 18 (1979), S. 29-33 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 62.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The defect structure in EuS single crystals grown form the melt is studied by etch pitting, scanning and high-voltage electron microscopy. Circular and square etch pits and a second phase in the shape of thin hexagonal platelets are observed by etching. Microprobe analysis indicates the platelets to consist of Eu metal. In the transmission electron microscope, smoothly curved dislocations and helical dislocations, small dislocation loops and inclusions associated with dislocations are observed. The possible origin of the detected dislocation structure is considered with reference to climb and glide processes occurring during cooling down the grown crystals. The results corroborate the glide geometry of the NaCl lattice for EuS.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00935900
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  • 7
    Electronic Resource
    Electronic Resource
    Necessary and sufficient conditions for the existence of shock curves of hyperbolic 1-conservation laws (1981)
    Chichester, West Sussex : Wiley-Blackwell
    Mathematical Methods in the Applied Sciences 3 (1981), S. 275-286 
    Details
    ISSN: 0170-4214
    Keywords: Mathematics and Statistics ; Applied Mathematics
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics
    Notes: We present three conditions for the existence of shock curves of hyperbolic 1-conservation laws. If at least two of the conditions hold, then shock curves exist uniquely in the classical sense. We present an example (Example 2, Section 4) for which two of the conditions do not hold and a new kind of singularity occurs. In Remark 1 we present two other conditions similar to the above three conditions which also imply the existence of shock curves.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/mma.1670030119
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