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  • 1
    Electronic Resource
    Electronic Resource
    Second-harmonic generation in highly textured LiNbO3 films prepared by pulsed laser deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3768-3770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: LiNbO3 films have been deposited on (001) sapphire substrates by pulsed laser deposition, in an oxygen environment. Films grown at substrate temperatures of 650 °C are crystalline, strongly textured, and show a degree of twining that is lower the higher the oxygen pressure is in the range of 0.5–1 Torr. Values of the nonlinear optical coefficients d33 and d31 of the films, measured via second-harmonic generation, are close to those for the bulk LiNbO3 single crystal. The dependence of both the degree of twining and the nonlinear optical response on the film thickness suggests that the films become closer to single domain for larger thickness. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289070
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence performance of pulsed-laser deposited Al2O3 thin films with large erbium concentrations (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5120-5125 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium doped Al2O3 films with concentrations up to 6×1020 Er cm−3 have been prepared in a single step process by pulsed-laser deposition. Alternate ablation of Al2O3 and Er targets has been used to control the in-depth distribution and in-plane concentration of Er3+ ions independently. The characteristic Er3+ photoluminescence response at 1.53 μm has been studied as a function of the Er3+ distribution. It is found that lifetime values can be greatly increased by increasing the Er3+–Er3+ in-depth separation above 3 nm. This result can be related to a reduced Er3+–Er3+ energy migration process. The in-plane Er3+ concentration was increased by either increasing the number of pulses on the Er target or the laser energy density for ablation. By the latter method in-plane concentrations as high as 1.1×1014 Er cm−2 per layer (corresponding to 2×1020 Er cm−3) were achieved, while keeping lifetime values as high as 6 ms. This result is explained in terms of shallow Er3+ implantation during deposition. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1409575
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  • 3
    Electronic Resource
    Electronic Resource
    The role of Er3+–Er3+ separation on the luminescence of Er–doped Al2O3 films prepared by pulsed laser deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 4073-4075 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium-doped Al2O3 films have been deposited in a single step process by pulsed laser deposition using independent ablation of Al2O3 and Er targets. This procedure allows to control the Er3+ ions in-depth distribution. The characteristic Er3+ photoluminescence at 1.54 μm shows lifetime values which increase from 6.0 to 7.1 ms when the Er3+–Er3+ in-depth separation is increased from 3 to 9 nm. These results are discussed in terms of the ion–ion interaction and clustering for separations shorter than 6 nm. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125540
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  • 4
    Electronic Resource
    Electronic Resource
    Delayed release of Li atoms from laser ablated lithium niobate (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 649-651 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The present vapor-phase optical (atomic) absorption measurements study the escape dynamics of Li atoms from a LiNbO3 target surface upon laser ablation in vacuum. The objective is to understand the low-Li content of LiNbO3 films prepared by pulsed laser deposition. A primary result is a delayed release of Li atoms, 2–20 μs after the laser pulse; they eject with a velocity of 6×105 cm s−1, which is consistent with an electronic ejection mechanism. The long emission period means there are almost no intraplume Li collisions in the gas phase and no forward focusing of the delayed released atoms. This appears to explain the low-Li content usually found in films grown in the normal direction. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125847
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    Paper (German National Licenses)
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