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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6368-6374 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical constants (n,K) of vacuum-evaporated polycrystalline CdSe thin films are determined over 900–3100 nm photon wavelengths. Variation of band gap and optical constants with film thickness and substrate temperature is studied. Anomalous variation of refractive index near the band gap is explained by the volume and surface imperfections. Average spin-orbit splitting of valence band (0.32) is estimated for the films deposited on mica substrates. A theoretical plot of refractive index near the band edge is done. The dispersion of refractive index in films is studied by considering a single-oscillator model.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6547-6555 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anomalous photovoltaic effect has been studied in polycrystalline ZnTe films. Increase of photovoltage on Te doping and a decrease on Zn doping is observed. The effect of phase transition, grain-boundary potential barrier, and surface space charge on the photovoltaic effect are reviewed and studied. Analysis of different experimental results reveals that the generation of emf in angularly deposited films on an insulating surface is mainly due to formation of p-n or p-p+ junctions at the grain boundaries and the surface band bending.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The development of an extreme ultraviolet (EUV) interferometer for testing EUV lithography optics operating at a wavelength of 13 nm using the U13U undulator beam line at the National Synchrotron Light Source is presented. The design and implementation of phase-measuring, lateral-shearing interferometry and a knife edge test will be described. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2733-2735 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of anomalous photovoltage in Cd0.8Zn0.2Te films is explained on the basis of the formation of junctions at the grain boundaries and the surface band bending. The role of atmospheric oxygen on the surface space charge and, indirectly, on photovoltage is demonstrated. The change of polarity with ambient temperature is explained as is the combined effect of the two models.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoelectron energy distribution spectra taken for the first time on micrometer-sized areas of cleaved GaAs(110) reveal rigid shifts from location to location in the photoemission core level peak energies, indicating band-bending changes on a microscopic scale.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 7 (1974), S. 350-355 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The exact expression for A(t), the tth-order Fourier coefficient of an X-ray diffraction line profile in terms of column length distribution, mean thickness, the r.m.s. strain and various mean strain gradients, has been derived and the assumptions involved in the Warren–Averbach method of separating particle size and r.m.s. strain have been critically examined. It has been observed that the Warren–Averbach method gives a r.m.s. value of the pseudo strain 〈ē2〉1/2 which is equal to the true r.m.s. strain 〈e2〉1/2 only at t = 0. It has been further shown that ln J(t), where J(t) is the tth-order Fourier coefficient of the strain profile, is not, as is taken in the Warren–Averbach method, linear in l20 when the given reflection hkl has been converted into a 00l0 reflection by suitable changes of axes. In the Warren–Averbach method, this essentially non-linear curve is taken as linear and a straight line passing through two points on this curve is extended to meet the ln A(t) axis, the intercept on which is supposed to give ln N(t), where N(t) is the tth-order Fourier transform of the particle-size profile. Thus approximate values of the mean particle size 〈T〉 and the r.m.s. pseudo strain 〈ē2〉1/2 are obtained. Based on the exact expression for A(t) a new multiple-order technique for determining not only the particle size and r.m.s. strain but also various strain derivatives has been developed and its limitations examined. It is found that an error introduced in the r.m.s. strain is of an order less than that of the experimental errors. Similarly, the single-line technique of Mitra & Misra [Acta Cryst. (1967), 23, 867–868] has been shown to give correct values of 〈T〉 and 〈e2〉1/2 within experimental error. The single-line technique has been proved to be quite a perfect and useful technique.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 12 (1979), S. 428-428 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 30 (1974), S. 385-387 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The Debye characteristic temperature of a binary alloy has been expressed in terms of ordering parameter, the Debye characteristic temperature of the constituent metals and the proportions of the metals. This has been done by considering the non-central force model with electron gas participation. The first- and second-nearest-neighbour interactions only have been considered. This expression is found to predict correctly the Debye characteristic temperatures of Cu3Au as a function of the long-range ordering parameter.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 30 (1974), S. 388-390 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The usual method of X-ray diffraction for determining the ordering parameter cannot be applied to α-brass. This problem has been solved by considering the Debye characteristic temperature, rather than the intensity of a diffraction line, as a measure of the parameter. By using the expression obtained in part I of this series of papers [Mitra & Chaudhuri (1974). Acta Cryst. A30, 385-387], the Debye characteristic temperatures of α-brass at different values of the ordering parameter have been calculated. From the X-ray diffraction data of α-brass after different heat treatments the Debye characteristic temperatures were determined. The ordering parameters were obtained by comparing the experimental values of the Debye characteristic temperatures with the theoretical values.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Czechoslovak journal of physics 32 (1982), S. 1153-1168 
    ISSN: 1572-9486
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Conductivity, photoconductivity, thermoelectric, Hall and photothermoelectric measurements have been carried out on vacuum evaporated, air exposed PbTe films of different thickness in the temperature range 300 K-130 K to probe into the mechanism of conduction and photoconduction in these films. The dark electronic transport properties have been explained considering accumulation layers on the free surface and substrate-film interface and also the diffusion of oxygen inside PbTe microcrystals. It appears that both bulk and potential barrier scattering predominate in the high temperature region (300 K-250 K) and only barrier scattering can explain the low temperature carrier mobility at lower temperatures (250 K-130 K). Photoconductivity can be described with trapping of minority carriers within the PbTe microcrystals in the low temperature region and in the high temperature region with diffusion of minority carriers to the surface. The same oxygen trap situated at a depth of 0·06 eV from the conduction band is found to be responsible for both conduction and photoconduction in the low temperature region.
    Type of Medium: Electronic Resource
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