Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Occurrence and distribution of acid-labile histone phosphates in regenerating rat liver (1974)
    s.l. : American Chemical Society
    Biochemistry 13 (1974), S. 3785-3789 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00715a026
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Characterization of protein kinases forming acid-labile histone phosphates in Walker-256 carcinosarcoma cell nuclei (1974)
    s.l. : American Chemical Society
    Biochemistry 13 (1974), S. 3780-3785 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00715a025
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Phosphorylation of nuclear proteins in rat regenerating liver (1977)
    s.l. : American Chemical Society
    Biochemistry 16 (1977), S. 4852-4855 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00641a016
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence of high-quality GaSb grown from Ga- and Sb-rich solutions by liquid-phase epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4275-4280 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of photoluminescence from the high-quality unintentionally doped GaSb layers grown by liquid-phase epitaxy has been studied. The epitaxial layers grown at temperatures above 590 °C, from the Ga- or Sb-rich solutions, reproducibly have a low-carrier concentration of 6–8×1015 cm−3 and exhibit p-type conduction. But it gives n type as grown from the Ga-rich solution at 360 °C. For the samples grown from the Ga-rich solutions, the 16 K photoluminescence spectrum is dominated by the partially resolved lines related to the transitions of excitons bound to donors and neutral acceptors. The acceptor-related band (777.8 meV) which is always presented in the GaSb material due to the native lattice defects has been much reduced as compared to the exciton-related lines. Especially for the n-type samples grown at low temperatures (360 °C), the ratio of the emission intensity from the exciton-related lines to that from the acceptor-related band is 10. For the samples grown from the Sb-rich solutions, the 16 K photoluminescence spectrum is also dominated by a bound exciton-related line with a full width at half maximum of 4.2 meV. In addition, the free-exciton transition with a full width at half maximum of 0.4 meV is also observed. As the temperature is increased, the intensity of the lines associated with the bound excitonic transitions for all the GaSb samples rapidly quenches off and the free-electron-to-free-hole transition becomes dominant. The temperature dependent band gap in GaSb layers determined from the photoluminescence peak energy varies as 0.813–[1.08×10−4 T2/(T−10.3)] eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352216
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Growth-temperature dependence of electrical and luminescent properties of high-quality GaSb grown by liquid-phase epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1101-1103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth-temperature dependence of electrical and photoluminescent properties from high-quality GaSb layers grown by liquid-phase epitaxy has been studied. At the growth temperature of 600 °C, a hole concentration of ∼ 1 × 1017 cm−3 is obtained and the 16 K photoluminescence spectrum is dominated by the line BE2 at 802.9 meV associated with excitons bound to acceptors, and a stronger band-acceptor emission band at 777.8 meV. With reducing the growth temperature, the hole concentration gradually decreases, as does the line BE2 in the photoluminescence spectrum. The GaSb layer conduction converts from p to n with a minimum hole concentration of 2–6 × 1015 cm−3 when the growth temperature is below 450 °C. The line D located at 808.2 meV, due to a donor-bound exciton transition, becomes dominant and the band-acceptor emission becomes very weak at lower growth temperatures. The is the first report on the growth-temperature dependence of the excitonic transitions from high-quality GaSb layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351786
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence of liquid-phase epitaxial Te-doped GaSb (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8495-8501 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) spectra of Te-doped GaSb epitaxial layers grown from Ga-rich solutions by liquid-phase epitaxy have been studied in the electron concentrations from 8×1015 to 4×1018 cm−3. The electron concentration can be accurately controlled by varying the growth temperature and adding the polycrystalline Te-doped GaSb to replace half or all the undoped GaSb starting material in the growth solution. The dependence of line position, line intensity, spectral shape, and broadening on the doping level, power excitation, and temperature has been investigated in detail. At concentrations as low as 1×1016 cm−3, the GaSb sample has become degenerate because of the small effective mass of electrons and the broad band consisting of five partially resolved line dominates the low-temperature PL spectra. At concentrations above 1×1018 cm−3, the 19 K PL spectra is mainly dominated by the sub-band-gap, substrate-induced line A' at 775.8 meV which is enhanced by the scattering of light off the back surface. This line A' is direct evidence for the band-gap shrinkage at high doping level. This is the first report to present the detailed luminescence lines in the PL spectra of the Te-doped GaSb samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354085
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Liquid-phase epitaxial growth of GaInAsSb with application to GaInAsSb/GaSb heterostructure diodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6116-6120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Ga0.82In0.18As0.17Sb0.83 layers lattice matched to GaSb substrates were grown by liquid-phase epitaxy using a supercooling technique. By selection of the optimum growth condition, we can obtain the undoped layer with a low hole concentration of 1.2×1016 cm−3 and a narrow full width at half maximum of 12 K photoluminescence spectrum of 11.6 meV. The temperature dependence of near band gap energy in Ga0.82In0.18As0.17Sb0.83 layers, determined from the photoluminescence peak energy, varies as 0.62–[5.2×10−4T2/(T+163)] eV. In order to obtain the low electron concentration layer, the Te-doped polycrystalline GaSb (n=4×1017 cm−3) is used to replace some of the undoped GaSb starting material in the growth solution for the purpose of compensation. The lowest hole concentration of 4–7×1015 cm−3 can be achieved when the GaSb starting material in the growth solution consists of 10% Te-doped polycrystalline. With increasing percentage, the layer conduction changes to n type, and it reaches an electron concentration of 2×1017 cm−3 by using only the Te-doped GaSb polycrystalline in the growth solution. On the other hand, the peak wavelength of 12 K photoluminescence spectrum decreases with increasing electron concentration because of the Burstein–Moss effect. Finally, an n-GaInAsSb/p-GaSb heterostructure diode was fabricated, which exhibits a forward-bias turn-on voltage of 1.8 V and an ideality factor of 1.86.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350419
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Abrin and Ricin: New Anti-tumour Substances (1970)
    [s.l.] : Nature Publishing Group
    Nature 227 (1970), S. 292-293 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Fig. 1. Effect of abrin on the change of body weight of mice given 2 x 107 Ehrlich ascites tumour cells and two single doses of abrin (0-2 //g/mouse), each on days 8 and 11 as arrowed. Fig. 2. Survival of mice treated with saline and abrin (injected on days 5, 7 and 9). A second injection was ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/227292a0
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    The dynamic analysis of a suspended cable due to a moving load (1989)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal for Numerical Methods in Engineering 28 (1989), S. 2361-2381 
    Details
    ISSN: 0029-5981
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Notes: The dynamic behaviour of a saggy suspension cable under a moving load was investigated. First of all, the updated Lagrangian formulation and the finite element method were used to derive the property matrices of a saggy suspension cable in order to define the discretized equations of motion. Then, the Jacobi method was applied to the determination of the natural frequencies and the mode shapes of the suspended cable. The moving-load-induced dynamic responses of the saggy suspended cable were obtained by using the Newmark direct integration method incorporated with the Newton-Raphson iteration technique. The influence of some pertinent factors, such as speed of moving load, ratio of axial rigidity to total cable weight (AE/0m̄g0L) and ratio of moving load mass to total cable mass, is the key point of the dynamic analysis.
    Additional Material: 18 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nme.1620281011
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...