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  • 1
    Electronic Resource
    Electronic Resource
    Procedure for preparing epitaxial Tl-2201 films on single crystal LaAlO3 (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1197-1199 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Tl-2201 films are prepared by treating precursor films deposited on single crystal LaAlO3 by laser ablation with Tl2O vapor at high temperature. Here, a procedure is described that includes thallization in two separate steps. The first thallization at 720 °C resulted in good epitaxy as well as in smooth morphology. The second thallization at 820 °C resulted in an improvement of the superconducting properties and in film crystallinity without affecting epitaxy or morphology. The films were characterized by x-ray diffraction (φ scan, Ω scan, θ–θ scan), and by resistance and susceptibility measurements. The films are tetragonal. In a typical film, the full width at half maximum of the Ω scan of the (0,0,10) reflection was 0.27°. A 5 μm wide bridge patterned in one film had a Tc of 84 K. The critical current density reached 1.4×106 A/cm2 at 77 K and 1.4×107 A/cm2 at 4.2 K. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289065
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  • 2
    Electronic Resource
    Electronic Resource
    Vortex Dynamics in a Thin Film of Tl2Ba2CuO6 (1999)
    Springer
    Journal of low temperature physics 117 (1999), S. 1441-1445 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The vortex dynamics in a Tl 2 Ba 2 CuO 6 (Tl-2201) thin film with a critical temperature T c = 80.8 K has been studied by electrical resistivity measurements for magnetic fields 0≤B≤12 T. The vortex glass line, as determined from the disappearance of linear resistivity, was found to be well described by B g (T) = B 0 [(1−T/T c )/(T/T c )]α, with B 0 ≈ 0.65 T and α ≈ 1.9. The glass line of Tl-2201 is observed to be located below the one of Tl 2 Ba 2 CaCu 2 O 8+δ (Tl-2212) in a magnetic phase diagram based on a reduced temperature scale T/T c , thus suggesting a higher anisotropy for Tl-2201.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1022554019336
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  • 3
    Electronic Resource
    Electronic Resource
    An Improved Procedure for Preparing Epitaxial Tl–2201 Films on Single Crystal LaAlO3 and SrTiO3 (1999)
    Springer
    Journal of low temperature physics 117 (1999), S. 641-644 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Epitaxial Tl-2201 films are prepared on single crystal LaAlO 3 and SrTiO 3 by thallization of thallium-free precursor films made by laser ablation. Thallization is carried out in two consecutive steps. In the first step, at 720 °C, a smooth and epitaxial film is produced. The second thallization, at 820 °C, improved film crystallinity and the T c . The films were characterized by X-ray diffraction and by resistance and susceptibility measurements. For a film on single crystal LaAlO 3 , the FWHM of the Ω scan (0,0,10) was 0.27°. T c was 84K while J c , reached 1.6×10 6 A/ cm 2 at 77K. A film on single crystal SrTiO 3 exhibited somewhat lower T c (78 K) while J c was much smaller (9.5×10 3 A/cm 2 at 70.4K).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1022564304970
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    Paper (German National Licenses)
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