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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 940-942 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new process, which employs the photoresist or SiO2 as a mask, the CH4-CO2 gas mixtures as the gas source of diamond deposition, and the HF:HNO3:H2O (1:1.1:10) solution as etching solution after the first step deposition, has been developed to improve the selective growth of diamond films. The longer etching time would result in increasing the selectivity during the following step of diamond film growth. The diamond nuclei growth on the undesired region would be removed and a thin SiO2 layer would be formed using the above solution, therefore, increasing the selectivity. Scanning electron microscopy and electron spectroscopy for chemical analysis were used to examine the selective loss and morphological change for the as-grown diamond films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2149-2151 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of nitrogen on the growth of diamond using the gas mixtures of CH4–CO2 by microwave plasma chemical vapor deposition was investigated. A clear improvement in the surface morphology and quality of the diamond films indicates the beneficial effect of adding nitrogen to CH4–CO gas mixtures. Analysis using Auger electron spectroscopy and secondary ion mass spectroscopy shows very low and uniform levels of nitrogen in the diamond films. Atomic nitrogen plays a dominant role in C/H/O/N plasma chemical vapor deposition processes because of the amount of oxygen atoms increased via the titration reaction of nitrogen atoms (a high-rate reaction): N+NO→N2+O. This produces a significant influence on diamond synthesis in a CH4–CO2–N2 gas mixture. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4483-4489 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A negative effect on the quality of diamond film because of the addition of hydrogen to carbon-dioxide–hydrocarbon gases was investigated. To elucidate the role of hydrogen and oxygen in diamond synthesis using microwave plasma chemical-vapor deposition, diamond films were deposited by adding hydrogen and oxygen to carbon-dioxide–methane-gas mixtures. Improvements in the quality of diamond film and extensions of the diamond-forming region were obtained, due to the addition of oxygen to the carbon-dioxide–methane-gas mixtures. The nucleation density of deposits increased when the amount of hydrogen was increased but decreased when the amount of oxygen was increased. The results of optical emission spectroscopy indicate that the amount of atomic hydrogen in the ground state remained nearly the same, respectively, with increasing amounts of hydrogen and oxygen. However, the amount of electronically excited atomic hydrogen and C2 emissions increased with an increase in the amount of added hydrogen; this means that the electronically excited atomic hydrogen did not benefit diamond growth and the C2 radicals facilitated the formation of amorphous or graphitic carbon. In contrast to the addition of hydrogen, when oxygen was added, the electronically excited atomic hydrogen and C2 radicals decreased, and a larger amount of oxygen-containing species such as atomic oxygen and OH radicals was in the plasma, so the quality of the diamond film improved. In summary, adding hydrogen to the carbon-dioxide–methane-gas mixtures had a negative effect on diamond growth, whereas adding oxygen had a beneficial effect.
    Type of Medium: Electronic Resource
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