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  • 1
    Electronic Resource
    Electronic Resource
    Interaction of Co with Si and SiO2 during rapid thermal annealing (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7612-7619 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of Co with Si and SiO2 during rapid thermal annealing has been investigated. Phase sequence, layer morphology, and reaction kinetics were studied by sheet resistance, x-ray diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy. With increasing annealing temperature, Co film on Si(100) is transformed sequentially into Co2Si, CoSi, and finally CoSi2 which corresponds to the minimum of sheet resistance. No evidence of silicide formation was observed for Co/SiO2 annealed even at the high temperature of 1050 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347530
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  • 2
    Electronic Resource
    Electronic Resource
    Hole limited recombination in polymer light-emitting diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1510-1512 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By comparing the quantum efficiencies of light emission in a series of poly[2-methoxy-5(2′ethyl)hexoxy-phenylenevinylene] diodes with calcium cathodes and various anode metals, we show that, in all cases electrons are the majority carrier and recombination is limited by hole injection. These conclusions are confirmed by the examination of a second series of samples in which alkanethiol barrier layers of varying thickness, are deposited on a gold anode. The highest external quantum efficiency was achieved in these experiments using a clean, semitransparent gold anode. We suggest that electron and hole injection rates play the primary role in determining current balance and that mobilities play a minor role. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123599
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Renormalization-group method for transitions to chaos via period doubling and intermittency in the chaotic region
    Amsterdam : Elsevier
    Physics Letters A 134 (1989), S. 417-420 
    Details
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9601(89)90362-9
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  • 4
    Electronic Resource
    Electronic Resource
    Quantitative auger electron spectroscopy of AlxGa1-xAs layers and superstructures grown by MBE (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 12 (1988), S. 156-160 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Quantitative Auger electron spectroscopy analysis is performed for the ternary system AlxGa1 - xAs with different x-values. Thick layers and superstructures are grown by molecular beam epitaxy. The relative sensitivity factors are determined by the method of the internal reference element. Correction for preferential sputtering of Ga is accounted for by a correction factor determined relative to electron probe microanalysis measurements. The matrix corrections are unimportant for this system. The results will be compared with photoluminescence measurements.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740120217
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  • 5
    Electronic Resource
    Electronic Resource
    Quantitative AES analysis of Ti silicide and Co silicide films (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 12 (1988), S. 151-155 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The possibilities for quantitative Auger analysis in the derivative mode of Ti and Co silicide films are examined as a function of the composition. Both matrix and sputter corrections are taken into account. It is shown that the theoretical expressions for both corrections predict a weak composition dependence. However, the quantitative results obtained with this procedure strongly deviate from Rutherford backscattering spectroscopy and X-ray diffraction measurements. It is concluded that the sputter and matrix corrections cannot sucessfully be applied for these materials. Experimental matrix and sputter correction factors are determined.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740120216
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  • 6
    Electronic Resource
    Electronic Resource
    Damage and recovery by electron and ion beam irradiation during AES analysis of silicon oxynitrides (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 15 (1990), S. 38-46 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Damage and recovery induced by electron and ion beam irradiation during AES analysis of silicon nitride and oxynitrides are discussed. The results show that after prolonged electron beam irradiation, a damage peak is induced in the Si LVV spectrum. The initial incubation time decreases for higher electron current densities and for higher O/N rations. The electron beam-induced damage is irreversible. The silicon nitride and oxynitrides are very susceptible to damage by energetic ion impact. However, this damage is reversible: the surface can be recovered by irradiation with an electron beam in the ultra-high vacuum system when the electron current density is kept low. The damage recovery is related to the irradiation time, the current density and the beam energy, as well as to the preparation method of the layers. The degree of damage and recovery are characterized by the fraction of ‘covalent’ silicon and silicon nitride obtained from factor analysis of the Si LVV spectrum. The mechanism of the damage and recovery will be discussed.
    Additional Material: 13 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740150107
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    Paper (German National Licenses)
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