Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
58 (1985), S. 4342-4345
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Raman spectroscopy has been used to study the lattice-mismatch strains in GaAs-InxAl1−xAs strained-layer superlattices grown by molecular beam epitaxy with the layer thicknesses of 10–200 A(ring) and In content x of 0.11, 0.20, and 0.35. The strain-induced shifts of the longitudinal optic phonon modes indicate that the GaAs and InxAl1−xAs layers have the tensile and compressive strains, respectively, along the interfaces. The strain calculated from the observed frequency shift agrees with the lattice-mismatch strain given by the elastic theory.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.335522
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