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  • 1
    Electronic Resource
    Electronic Resource
    Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 273-275 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on fabrication and characterization of blue GaN–InGaN multi-quantum well (MQW) light-emitting diodes (LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor deposition growth procedure in selective areas defined by openings in a SiO2 mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250 °C. The peak emission wavelengths are measured as a function of both dc and pulse bias current and plate temperature to estimate the thermal impedance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125745
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  • 2
    Electronic Resource
    Electronic Resource
    High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3800-3802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on quaternary AlInGaN/InGaN multiple quantum well (MQW) light emitting diode structures grown on sapphire substrates. The structures demonstrate high quality of the p–n junctions with quaternary MQW. At low forward bias (below 2 V), the temperature dependent of current–voltage characteristics are exponential with the ideality factor of 2.28, which is in a good agreement with the model of the injected carrier recombination in the space charge region. This ideality factor value is approximately three times lower than for conventional GaN/InGaN light emitting diodes (LEDs). The obtained data indicate the recombination in p–n junction space charge region to be responsible for a current transport in LED structures with quaternary quantum wells. This is in contrast to InGaN based LEDs, where carrier tunneling dominates either because of high doping of the active layer or due to the high density of localized states. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331084
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Band-edge luminescence in quaternary AlInGaN light-emitting diodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 817-819 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Operation of InGaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with quaternary AlInGaN barriers at room and elevated temperatures is reported. The devices outperform conventional GaN/InGaN MQW LEDs, especially at high pump currents. From the measurements of quantum efficiency and total emitted power under dc and pulsed pumping, we show the emission mechanism for quaternary barrier MQWs to be predominantly linked to band-to-band transitions. This is in contrast to localized state emission observed for conventional InGaN/InGaN and GaN/InGaN LEDs. The band-to-band recombination with an increased quantum-well depth improves the high-current performance of the quaternary barrier MQW LEDs, making them attractive for high-power solid-state lighting applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343493
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  • 4
    Electronic Resource
    Electronic Resource
    Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4240-4242 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ultraviolet light-emitting diode with peak emission wavelength at 340 nm is reported. The active layers of the device were comprised of quaternary AlInGaN/AlInGaN multiple quantum wells, which were deposited over sapphire substrates using a pulsed atomic-layer epitaxy process that allows precise control of the composition and thickness. A comparative study of devices over sapphire and SiC substrates was done to determine the influence of the epilayer design on the performance parameters and the role of substrate absorption. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425453
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    Paper (German National Licenses)
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