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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3035-3043 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molybdenum metal deposition from the decomposition of Mo(CO)6 adsorbed on Si(100), Mo, and Cu surfaces was studied by x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, thermal desorption spectroscopy, and low-energy electron diffraction. Pyrolytic, photolytic, and electron-induced Mo(CO)6 decomposition were observed and indicated different dissociation mechanisms. Thermally decomposed Mo(CO)6 was found to leave metallic Mo in the presence of C and O. Electron-induced decomposition resulted in the formation of molybdenum carbide on the surfaces. Ultraviolet (UV) irradiation of adsorbed Mo(CO)6 induced new peaks in XPS and TDS spectra, suggesting the formation of an unsaturated molybdenum carbonyl adsorbate. Mo(CO)6 was found to form a multilayer on these surfaces at low temperatures, and desorb with zero-order kinetics. Although both adsorbate desorption and decomposition took place when the samples were heated, desorption was the dominant reaction path. UV irradiation of gaseous and coadsorbed Mo(CO)6 and O2 was also investigated. UV irradiation of the gas-phase mixture leads to MoO2 and MoO3 deposition; however, UV irradiation of coadsorbed Mo(CO)6 and O2 resulted in unsaturated molybdenum carbonyl. The effects of annealing and Ar+ bombardment on the Mo-deposited Si(100) surface are also reported.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 1361-1377 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The dynamics of the UV photochemistry of HBr on LiF(001) has been studied by angle-resolved time-of-flight mass spectrometry in ultra-high vacuum. Single-photon photodissociation of adsorbed HBr at 193 nm resulted in photofragment translational energy distributions that differed from those produced in the gas-phase photolysis. Angular distributions of the fast H-atom photofragments peaked at 55±5° to the surface normal, consistent with a preferentially oriented adsorbate geometry. The angular distribution of atomic H obtained from photodissociation of HBr(ad) using polarized light indicated that a substantial fraction of the H atoms collided with the surface before leaving it. Two types of photoreactions in the adsorbed state were observed. Molecular hydrogen was formed in the photoinitiated abstraction reaction, H+HBr(ad)→H2(g)+Br, and its markedly non-Boltzmann translational energy distribution was found to have less energy than would be consistent with gas-phase experiments (performed elsewhere). Photoproducts from the bimolecular reaction 2HX(ad)→H2+X2, X=Cl, Br were also observed in the present study. This photoreaction, which did not depend on prior photodissociation of HX(ad), is thought to proceed through electronic excitation of an HX dimer in the adsorbed state.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 598-600 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 92 (1988), S. 6859-6861 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3291-3293 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a thin predeposited B layer prior to the epitaxial growth of Ge on CaF2, we have obtained significantly improved Ge crystalline quality and surface morphology for Ge/CaF2/Si(111) and Ge/CaF2/Si(100) structures. Although B acts as a surfactant in suppressing island formation, it does not migrate to the growth front during Ge growth, which was widely observed in the surfactant-assisted epitaxial growth of Ge on Si. The B predeposit also prevents Ca from migrating to the Ge surface, and promotes A-type epitaxy of Ge(111) when Si(111) substrates are used.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 338-340 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: While epitaxial CaF2 films grown on Si(111) at temperatures above 550 °C exhibited flat capacitance-voltage (C-V) curves, suggesting a pinned CaF2/Si(111) interface, we have observed unpinned C-V curves from as-deposited epitaxial CaF2 grown at 300 °C. Our results demonstrate that C-V characteristics of CaF2/Si(111) are determined by the thermal history, rather than the crystalline quality, of the CaF2 film. Correlations among CaF2/Si interface state density, thermal stress, and atomic bonding at the interface are discussed.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 270-272 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Despite their large lattice mismatch (∼25%), epitaxial CaF2 films have been grown on single crystal Al(111) on Si(111) by low temperature molecular beam epitaxy. X-ray diffraction shows that the orientations of the CaF2 are the same as those of the Al films, whether the orientations of the Al are the same rotated 180° or with respect to the underlying Si substrate. Furthermore, our successful fabrication of an epitaxial Al/CaF2/Al/Si(111) structure suggests that Al can be a useful conductor material in three-dimensional device integration.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2467-2469 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the visible photoluminescence (PL) and microstructure of amorphous Si (a-Si) after annealing and etching. The a-Si layers were grown on (100)Si substrates and partially crystallized by annealing between 550–1150 °C. Porous Si layers (PSLs) were then produced by etching in HF-HNO3. While no visible PL was observed from unannealed and etched a-Si, visible PL was detected after annealing and etching. The observation of visible PL after etching coincided with the observation of Si microcrystallites in the annealed layer. The results suggest that an initial crystalline structure is important for fabricating luminescent PSLs.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1757-1759 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nd3+ doped CaF2 films have been grown epitaxially on Si(111) and Al(111)/Si(111) using CaF2 and NdF3 evaporation. Photoluminescence spectra from these samples show high intensity and narrow emission linewidth even when the thickness of the CaF2:Nd films is reduced to 0.2 μm. The 10 457 A(ring) emission line is not quenched until the Nd concentration exceeds 3.8 wt.%. Moreover, while similar spectra are observed, the photoluminescence intensity from the CaF2:Nd films grown on Al/Si(111) is significantly higher than from the CaF2:Nd on Si(111).
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 93 (1989), S. 7761-7762 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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