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  • 1
    Digitale Medien
    Digitale Medien
    Structural characteristics of Y2O3 films grown on oxidized Si(111) surface (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1647-1652 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigated the characteristics of Y2O3 films grown on an oxidized Si(111) surface, using x-ray diffraction, Rutherford backscattering spectroscopy, and high-resolution transmission electron microscopy. The films grown on the oxidized Si show drastically improved crystallinity, compared with the film grown on clean Si surfaces: channeling minimum yield (Xmin) of 2.5% and full width at half maximum of rocking curve lower than 0.03°. The improvement of the crystallinity was due to the difference of the crystalline structure at the interface between the films grown on the oxidized and clean Si surfaces. Crystalline orientation of Y2O3 islands at the interfacial region was misaligned from the normal substrate direction. The misalignment decreased with increasing the substrate temperature. In particular, the ordering of the oxygen atom in the film grown on oxidized Si was improved compared to that of the Y atom, indicating that the crystallinity of the film is dominantly determined by the arrangement of the oxygen atom in the unit cell. These characteristics of crystalline structure are influenced by the interfacial interactions among SiO2, Y, and Si. The interfacial SiO2 layer can be removed at high growth temperature above 800 °C using the reaction process; the high crystalline Y2O3 film without any interlayer oxide can be obtained. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1337920
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  • 2
    Digitale Medien
    Digitale Medien
    Magnetic and collisional effects on presheaths (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 3222-3233 
    Details
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of both magnetic field and collisions on presheath properties are experimentally investigated in plasmas with electron temperatures much greater than ion temperatures. Measurements of plasma potential in collisionless plasmas show presheath thicknesses at boundaries oblique to magnetic field to be approximately (Cs/ωci)sin ψ, where Cs is the ion sound speed, ωci is the ion gyrofrequency, and Ψ is the angle between the magnetic field and the normal to the wall boundary. Measurements of plasma potential in collisional plasmas find presheaths consisting of two distinctive regions. With ion–neutral collision mean-free path λn〈(Cs/ωci)sin ψ, the presheath region next to the sheath has collisional characteristics and a thickness of approximately (0.5–0.6)λn. The corresponding presheath region adjacent to the bulk plasma has magnetic characteristics and a thickness of approximately (0.5–0.9)(Cs/ωci)sin ψ. Equipotential contours in the collisional region of this presheath are found to be parallel to the boundary, while those in the magnetic region are not. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.871153
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  • 3
    Digitale Medien
    Digitale Medien
    Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 198-204 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Heteroepitaxial Y2O3 films were grown on an Si(111) substrate by ion assisted evaporation in an ultrahigh vacuum, and their properties such as crystallinity, film stress, and morphological change were investigated using the various measurement methods. The crystallinity was assessed by x-ray diffraction (XRD) and reflection high-energy electron diffraction. Interface crystallinity was also examined by Rutherford backscattering spectroscopy (RBS) channeling and transmission electron microscopy. The strain of the films was measured by RBS channeling and XRD. Surface and interface morphological characteristics were observed by atomic force microscopy and x-ray scattering method. By comparing the interface with the surface characteristics, we can conclude that many defects at the interface region were generated by interface interaction between the yttrium metal and Si substrate. Moreover, the film quality dominantly depended on the deposition temperature. The crystallinity was greatly improved and the surface roughness was drastically decreased in the temperature range 500–600 °C. On the other hand, in the temperature range 600–700 °C, the compressive stress and film density were further increased, and the island size decreased. Also, the shape of the surface islands was transformed from elliptical to triangular. The film stress was found primarily at the interface area because of the interaction between yttrium and Si substrate. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.370717
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  • 4
    Digitale Medien
    Digitale Medien
    The virtual cathode as a transient double sheath (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2927-2933 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The two-dimensional plasma potential measurements are given of a space-charge dominated double sheath near a hot cathode. Laboratory data show that a virtual cathode is a self-consistent solution only for a transient cathode-plasma system. Slow charge exchange ions get trapped in the potential dip that forms the virtual cathode and eventually destroy it.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341552
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  • 5
    Digitale Medien
    Digitale Medien
    Multiple valued floating potentials of Langmuir probes (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5674-5677 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is shown that Langmuir probes can have three different floating potentials in plasmas produced by a hot filament discharge in a multi-dipole device when the primary and secondary electron currents are comparable. The measured floating potential depends on the probe's initial condition—the most negative and the least negative potentials are found to be stable and the in-between value is found to be unstable. Results are compared to a simple theoretical model.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.340301
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  • 6
    Digitale Medien
    Digitale Medien
    Emissive probe current bias method of measuring dc vacuum potential (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 270-275 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: It is experimentally demonstrated that, with proper current bias, emissive probes can accurately measure dc electric potential in a vacuum. A comparison is made of the accuracy and time response of this "vacuum current bias'' method with two other emissive probe techniques, the inflection point in the limit of zero emission, and the floating potential of a strongly heated probe.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1140239
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  • 7
    Digitale Medien
    Digitale Medien
    Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 903-905 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Heteroepitaxial Y2O3 films were grown on Si(100) substrates by the technique of reactive ionized cluster beam deposition. The crystallinity of the films was investigated with reflection high energy electron diffraction (RHEED), glancing angle x-ray diffraction (GXRD), and the interface was examined by high resolution transmission electron microscopy (HRTEM). Under the condition of 5 kV acceleration voltage at the substrate temperature of 800 °C, the Y2O3 film grows epitaxially on the Si(100) substrate. RHEED and GXRD results revealed that the epitaxial relationship between Y2O3 and Si(100) is Y2O3(110)//Si(100), and HRTEM observation showed a sharp interface without an amorphous layer. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119683
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  • 8
    Digitale Medien
    Digitale Medien
    Dielectric characteristics of Al2O3–HfO2 nanolaminates on Si(100) (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1071-1073 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The structural characteristics and the chemical state of a HfO2–Al2O3 nanolaminate structure, depending on the postannealing temperature, were examined by x-ray diffraction and x-ray photoelectron spectroscopy. The structural stability is significantly enhanced up to 870 °C and so is able to sustain its amorphous and laminate structure. However, the laminate structure is drastically broken at the annealing temperature of 920 °C and the crystallization is locally generated. In particular, the formation of the interfacial layer during the postannealing treatment is effectively suppressed in the nanolaminated structure. The dielectric constant of the nanolaminate structure calculated from the accumulation capacitance increases from ∼10 to ∼17 as the annealing temperature increases. This change is closely related to the degree of the mixture composed by Al2O3 and HfO2. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1499223
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  • 9
    Digitale Medien
    Digitale Medien
    Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 472-474 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The thermal stability and structural characteristics for gate stack structure of HfO2 dielectrics deposited by atomic-layer deposition (ALD) were investigated. The structural characteristics and chemical state of the HfO2 films in relation to the film thickness and postannealing temperature were examined by x-ray diffraction and x-ray photoelectron spectroscopy. An interfacial layer of hafnium silicate with an amorphous structure was grown on the oxidized Si substrate at an initial growth stage. The structural characteristics of the HfO2 films are closely affected by the interfacial layer and are depended on the thickness of the films. The 45 Å thick HfO2 film with an amorphous structure was changed into a polycrystalline structure after rapid temperature annealing of 750 °C for 5 min, while thicker films were grown into a polycrystalline structure of monoclinic or tetragonal crystal structure. The silicate layer grown at the interfacial region is not stable even at 700 °C under ultrahigh vacuum condition and changes into the silicide layers. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1487923
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  • 10
    Digitale Medien
    Digitale Medien
    Thermal Stability of the Pigments Hydroxysafflor Yellow A, Safflor Yellow B, and Precarthamin from Safflower (Carthamus tinctorius) (2003)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 68 (2003), S. 0 
    Details
    ISSN: 1750-3841
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Notizen: Three major yellow pigments were isolated from safflower petals (Carthamus tinctorius) and characterized as hydroxysafflor yellow A (1), safflor yellow B (2), and precarthamin (3) by 1H-NMR, 1H-1H COSY, 13C-NMR, HMQC, and HMBC spectral analysis. Thermal degradation reactions of 3 yellow pigments 1 to 3 at temperatures of 70 to 90 °C were carried out at different pH levels within the range of 3.0 to 10.0 by UV-vis spectral measurements. First-order reaction kinetics was observed for the degradation of safflower yellow pigments (1 to 3) at pH 3.0 and 5.0. Activation energies of thermal degradation of 1-3 at pH 5.0 were calculated as 17.0, 15.4, and 20.1 kcal/mol, respectively. At neutral and alkaline conditions, yellow pigments 1-3 did not follow simple first-order kinetics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1365-2621.2003.tb08252.x
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