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  • 1
    Electronic Resource
    Electronic Resource
    Thermoelectric transport properties of n-doped and p-doped Bi0.91Sb0.09 alloy thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3655-3660 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to understand the doping behavior of extremely narrow band gap materials and to optimize their characteristics for use in a thermoelectric module, we performed n- and p-type doping experiments on semiconducting Bi0.91Sb0.09 alloy thin films using the group VI(IV) element Te(Sn) as donor (acceptor). Thermoelectric power (TEP), electrical resistivity, and Hall effect were studied in the range of temperatures 5–300 K. Increased Sn doping causes the TEP to change sign (from negative to positive) and the maximum in the TEP can be controlled with the dopant concentration. Increased Te doping causes the TEP to decrease. The maximum Te-doped electron concentration was about 5×1020 cm−3 and the highest Sn-doped hole concentration was about 1×1021 cm−3. Highly Sn- and Te-doped samples show degenerate behavior in the electrical resistivity, TEP and Hall measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369729
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  • 2
    Electronic Resource
    Electronic Resource
    Anisotropic Seebeck and magneto-Seebeck coefficients of Bi and Bi0.92Sb0.08 alloy thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 808-812 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown Bi and BiSb alloy thin films on (211)CdTe substrates by molecular beam epitaxy. Growth proceeds with the Bi or BiSb (00.1) axis oriented along the CdTe[111] direction, which is tilted by 19° with respect to the substrate normal. Measurements of the Seebeck coefficient reveal a strong dependence on angle within the plane, due to the anisotropic electronic structure. The coefficient measured along the [1¯11] axis, which includes a trigonal contribution from the Seebeck tensor, is considerably higher than the value along the [011¯] axis. The magneto-Seebeck coefficient was also studied, for magnetic fields of 0–0.7 T. We observe a strong dependence on both crystal-axis and magnetic field direction, the so-called "umkehr" effect. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373740
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2761-2763 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a simple method for preparing polycrystalline ZnO thin films with good luminescent properties: the oxidization of metallic Zn films. In photoluminescence (PL) studies at room temperature for wavelengths between 370 and 675 nm, we have observed a single exciton peak around 390 nm without any deep-level emission and a small PL full width at half maximum (23 meV), indicating that the concentrations of the defects responsible for the deep-level emissions are negligible. We have also observed optically pumped lasing action in these films. The threshold intensity for lasing was ∼9 MW/cm2. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125141
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  • 4
    Electronic Resource
    Electronic Resource
    Large magnetoresistance in postannealed Bi thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3651-3653 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed a large increase in the magnetoresistance (MR) of molecular beam epitaxy grown Bi thin films, which were subjected to a postannealing procedure 3 °C below the Bi melting point. We have achieved an increase in the MR by a factor of 2560 at helium temperatures compared with of 343 for an as-grown film. The enhancement of the MR in the annealed films is due to higher electron and hole mobilities (μe(approximate)1×106 cm2/V s at 5 K) relative to those of the as-grown films (μe(approximate)9×104 cm2/V s at 5 K). The enhancement of the mobility in the annealed films is also supported by the observation of Shubnikov–de Haas oscillations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416157
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  • 5
    Electronic Resource
    Electronic Resource
    Antisite defects of Bi2Te3 thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1401-1403 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown Bi2Te3 thin films on CdTe(111)B using molecular-beam epitaxy. Structural and transport properties have been investigated using in situ reflection high-energy electron diffraction, θ–2θ x-ray diffraction analysis, thermopower, and Hall measurements. Both the crystallinity and the transport are found to be strongly affected by nonstoichiometry. The most stoichiometric sample had a high crystallinity, high thermopower, and high electron mobility. However, Bi2Te3 films with excess Te had a reduced lattice constant, poorer crystallinity, reduced magnitude of the thermopower, and reduced mobility. All of these observations can be explained in terms of antisite defects in which excess Te occupies Bi lattice sites and behaves as a n-type dopant. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124707
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