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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 570-578 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physical properties (transition energy, oscillator strength, linewidth, binding energy, and reduced effective mass) of room temperature excitons in compressively strained InGaAs/InGaAlAs multiquantum-well (MQW) structures as a function of the well width have been investigated for the first time by both absorption measurements and photomodulated transmittance measurements. Photomodulated transmittance spectroscopy has been successfully applied to clearly reveal critical transition points. Measured transition energies are in good agreement with a model which includes the heavy hole and light hole splitting due to the strain. For well widths of 2.5–7.5 nm, oscillator strengths are smaller for the strained layer MQWs than for the lattice-matched MQWs by 35%–45%. This is due to the larger exciton radius for the strained MQWs resulting from smaller in-plane reduced effective masses (0.031–0.038m0), which are 65% of those of the lattice-matched MQWs.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2815-2817 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution x-ray diffraction (HRXRD) has been used to determine the layer compositions and thicknesses of compressively strained InGaAs multiple-quantum-well (MQW) structures embedded in thick cladding layers that are nominally lattice matched to InP. The entire layer structure was accurately determined from the results of HRXRD measurements for a simple strained MQW structure in which barriers and claddings are of the same composition. The estimated margins of error are less than 1% for the quantum-well indium composition and ±2.5 A(ring) for well and barrier thicknesses. The layer structure of the active region in a complete InGaAlAs graded-index separate confinement strained MQW laser diode has also been determined by HRXRD.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 564-566 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiphonon excitation induced by long-range order crystal-field and short-range order Jahn–Teller distortion effects is observed in Fe-doped semi-insulating InP in the spectral range from 400 to 1100 cm−1 for infrared light propagating in a slab waveguide geometry. Transmission measurement data are analyzed in terms of phonon energies at critical points in the Brillouin zone. The phonon energies obtained are in excellent agreement with recently reported second order Raman scattering spectra and two-phonon absorption measurements of crystalline InP. The energy differences between the nearly degenerate two phonon transverse optical+longitudinal optical transitions at the Γ, X, and L points are also resolved and shown to be 10 cm−1. No localized mode or vibronic level absorption is observed, consistent with the relatively low concentration of Fe impurities in the samples.
    Type of Medium: Electronic Resource
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