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  • 1
    Electronic Resource
    Electronic Resource
    Formation and structure of epitaxial ruthenium silicides on (111)Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2411-2414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ruthenium silicides have been successfully grown on silicon for the first time. Chemical electroless plating of a Ru thin film on silicon with subsequent annealing is a new approach and also the first demonstration of epitaxial growth of these silicides. Transmission electron microscopy was applied to characterize phases of silicides, microstructure, and orientation relationships. Three different epitaxial phases were found and identified to be Ru2Si3, RuSi, and Ru2Si. RuSi and Ru2Si are two new phases discovered in comparison with those previously reported in thin film reactions. Furthermore, Ru2Si3 was found to be a stable phase at elevated temperatures since it can be transformed from Ru2Si and RuSi by sufficiently long annealing. Various diffraction patterns were analyzed and orientation relationships were determined. Moire's fringes of RuSi and interfacial dislocations of Ru2Si3 and Ru2Si were found. The average spacings were measured to be from 1000 to 4000 A(ring) for Ru2Si3/Si. The composition of the silicides was measured by scanning Auger electron spectroscopy and 2% phosphorus was found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346500
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  • 2
    Electronic Resource
    Electronic Resource
    Microstructural changes in confined submicrometer aluminum films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2575-2577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stress effect on microstructure evolution in submicrometer Al dots in confinement has been studied by transmission electron microscopy. Direct observation of grain growth and void formation in the dots, unconfined as well as confined by sputtered quartz, was investigated. In the as-deposited state, most of the grains were larger than the film thickness of 300 A(ring), indicating that the grains have grown during the Al deposition and/or the quartz deposition. Voids were only found in the confined samples. Grain growth was retarded in the confined samples upon a stepwise annealing from room temperature to 400 °C, yet secondary grain growth occurred at temperatures above 500 °C. For the unconfined samples, abnormal grain growth occurred at 200 °C. The retardation of grain growth in the confined sample was attributed to the lack of stress gradient and vacancy sources and the hinderance of dislocation motion. The mechanism of secondary grain growth in the confined samples was observed to be the coalesence of adjacent grains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353069
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Microstructure evolution of newly developed electroless ruthenium deposition on silicon observed by scanning transmission electron microscope (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7848-7852 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Autocatalytic Ruthenium thin films have been successfully deposited on silicon. The deposition reactions were proven to be electroless by the measurement of the electrochemical rest potentials of anodic and cathodic partial reactions and mixed potentials. A new method for direct observation of microstructure and formation at the initial stage of deposition has also been developed. The progressive formation and microstructure of ruthenium thin films during various growth stages have been investigated by scanning transmission electron microscopy. Deposition takes place immediately after the n-type silicon is immersed in the electroless plating solution. The film was identified to be amorphous by the selected area electron diffraction analysis. Cross-sectional transmission electron microscopy method was utilized to explore the uniformity and morphology of the film as well as the Ru/Si interface. Accordingly, the deposition rate was also measured with a high precision nanometer. The microstructure evolution and significance in applications are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347517
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  • 4
    Electronic Resource
    Electronic Resource
    Solid-state epitaxy of osmium silicide on (111)Si under reducing atmosphere (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3011-3013 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Under a mixed hydrogen/argon atmosphere epitaxial osmium silicide has been successfully grown on (111)Si for the first time. A new process of electroless deposited osmium film on Si subsequent with a suitable two-step hydrogen annealing scheme was developed for the formation of epitaxial osmium silicide. Polycrystalline silicides of Os2Si3 and OsSi2 were found in all cases of single annealing, and the grain size increased with annealing temperature. While in the developed two-step annealing scheme single-crystalline silicide can form; the first step annealing was found to be critical to determine epitaxy. The epitaxial silicide was identified to be OsSi2 of orthorhombic structure. The orientation relationships between epitaxial OsSi2 and Si were found to be (040)OsSi2(parallel)(22¯0)Si, and [102¯] OsSi2(parallel) [111] Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344185
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    Paper (German National Licenses)
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